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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CJB02N65	文件：335.68 Kbytes Page：2 Pages	TO-263-2L Plastic-Encapsulate MOSFETS	ZPSEMI ZP Semiconductor	ZPSEMI
CEB02N65A	文件：539.32 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB02N65D	文件：350.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB02N65G	文件：599.68 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED02N65A	文件：646.5 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,1.2A,RDS(ON)=10.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEEF02N65G	文件：557.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,2.0A,RDS(ON)=5.0W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126Fpackage. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF02N65A	文件：539.32 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF02N65D	文件：350.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF02N65G	文件：599.68 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEK02N65A	文件：502.26 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,0.35A,RDS(ON)=10.5W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP02N65A	文件：539.32 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP02N65A	文件：397.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP02N65D	文件：350.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP02N65G	文件：599.68 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP02N65G	文件：398.62 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU02N65A	文件：421.64 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.2A,RDS(ON)=10.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU02N65A	文件：646.5 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,1.2A,RDS(ON)=10.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU02N65G	文件：1.54693 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEU02N65G	文件：423.4 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.8A,RDS(ON)=5.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CJD02N65	文件：1.29804 Mbytes Page：4 Pages	N-ChannelPowerMOSFET	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU

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供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	CJB02N65	CJ/长电	21+ROHS	TO263	28888	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市河锋鑫科技有限公司	CJB08N65	CJ/长电	2022+	TO-263	50000	原厂代理终端免费提供样品	询价
深圳市创新迹电子有限公司	CJB08N65	CJ/长电	2022+	TO-263	30000	进口原装现货供应,原装假一罚十	询价
深圳市惊羽科技有限公司	CJB08N65	CJ-长电	24+25+/26+27+	TO-263-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市吉利鑫科技发展有限公司	CJB08N65贴片三极管	CJ/长电	2022+	TO-263	79999		询价
深圳市安富世纪电子有限公司	CJB1117-1.2	CJ	21+	SOT-89	50000	全新原装正品现货,支持订货	询价
深圳市威雅利发展有限公司	CJB1117-1.2	CJ	1912	SOT-89	1000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市汇莱威科技有限公司	CJB1117-1.2	CJ	2023+	SOT-89	55045	16余年资质绝对原盒原盘更多数量	询价
天津市博通航睿技术有限公司	CJB1117-1.2	CJ	1912	SOT-89	1100	全新原装实单必成	询价
深圳市百视威讯电子科技有限公司	CJB1117-3.3		23+	N/A	30650	正品授权货源可靠	询价

更多CJB02N65供应商更新时间2024-5-22 9:30:00

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