Description

The CHK040A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and telecommunication

The CHK040A-SOA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. The CHK040A-SOA is available in a cerami cmetal flange power package providing low

parasitic and low thermal resistance.

Main Features

■ Wide band capability: up to 3.5GHz

■ Pulsed and CW operating modes

■ High power: > 45W

■ High Efficiency: up to 70

■ DC bias: VDS =50V @ ID_Q =300mA

■ MTTF > 106 hours @ Tj=200°C

■ RoHS Flange Ceramic package