Description

Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT) designed specifically for high efficiency, high gain

and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE,

4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT

device is unmatched so it is suitable for power amplifier applications from

10 MHz through 6000 MHz, such as tactical communications, CATV, UAV data

links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices.

At a VDD of 50 V, the device provide 2.5 W of average power or 15 W of peak

power. At a VDD of 28 V, the device provides 1 W of average power and 7 W

of peak power. The transistor is available in a 3 mm x 4 mm, surface mount,

dualflat-no-lead (DFN) package.

Features for 50 V in CGHV27015S-AMP1

• 2.4 - 2.7 GHz Operation

• 15 W Typical Output Power

• 21 dB Gain at 2.5 W PAVE

• -38 dBc ACLR at 2.5 W PAVE

• 32 efficiency at 2.5 W PAVE

• High degree of APD and DPD correction can be

applied

CGHV27015S属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。WOLFSPEED, INC.制造生产的CGHV27015S晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。