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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEB02N6	文件：75.08 Kbytes Page：5 Pages	N-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB02N6	文件：132.65 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB02N6A	文件：592.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB02N6A	文件：125.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB02N6G	文件：599.54 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB02N6G	文件：398.08 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED02N6	文件：44.81 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●600V,1.9A,RDS(ON)=5Ω@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED02N6A	文件：123.74 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.3A,RDS(ON)=8Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED02N6A	文件：609.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED02N6G	文件：615.01 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,2A,RDS(ON)=5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED02N6G	文件：423.36 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,2A,RDS(ON)=5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEE02N6A	文件：461.29 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,1.3A,RDS(ON)=8.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEE02N6A	文件：721.46 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEE02N6G	文件：723.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,2.0A,RDS(ON)=5.0W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEE02N6G	文件：462.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,2.0A,RDS(ON)=5.0Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF02N6	文件：45.44 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF02N6	文件：132.65 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF02N6A	文件：125.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF02N6A	文件：592.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF02N6G	文件：599.54 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	CEP02N6AIC	CET/華瑞	24+	TO-220	156585	明嘉莱只做原装正品现货	询价
齐创科技(上海,北京,青岛)有限公司	CEP02N6G	SR	23+	TO-220	5000	原装正品,假一罚十	询价
深圳兆威电子有限公司	CEP02N6G	VB	2019	TO-220	55000	绝对原装正品假一罚十!	询价
深圳市纳艾斯科技有限公司	CEP02N6G	CET	2020+	TO-220	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市航润创能电子集团有限公司	CEP02N6G	CET	21+	TO-220	60	原装现货假一赔十	询价
深圳市汇莱威科技有限公司	CEP02N6G	CET/華瑞		TO-220	265209	假一罚十原包原标签常备现货!	询价
深圳市振芯物联科技有限公司	CEP02N6G	CET	22+	TO-220	32350	原装正品假一罚十公司现货	询价
深圳市国宇半导体科技有限公司	CEP02N6G	CET/華瑞	23+	TO-220	10000	公司只做原装正品	询价
深圳市威尔健半导体有限公司	CEP02N6G	VBSEMI/台湾微碧	23+	TO220	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	CEP02N6G	C	TO-220	22+	6000	十年配单,只做原装	询价

更多CEP02N6AIC供应商更新时间2024-6-14 10:07:00

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