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CEP02N6A

N-Channel Enhancement Mode Field Effect Transistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP02N6A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB02N6

N-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ​​​​​​​■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB02N6

N-ChannelEnhancementModeFieldEffectTransistor

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB02N6A

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED02N6

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●600V,1.9A,RDS(ON)=5Ω@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,1.3A,RDS(ON)=8Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,2A,RDS(ON)=5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,2A,RDS(ON)=5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEE02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,1.3A,RDS(ON)=8.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEE02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEE02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,2.0A,RDS(ON)=5.0W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEE02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,2.0A,RDS(ON)=5.0Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEF02N6

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ​​​​​​​■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEF02N6

N-ChannelEnhancementModeFieldEffectTransistor

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEF02N6A

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

详细参数

  • 型号:

    CEP02N6A

  • 制造商:

    CET

  • 制造商全称:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
CET
19+
TO-220
30000
询价
CET
23+
TO220/3
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
CET
03+
TO2203
152
询价
CET
2022
TO220/3
2058
原厂原装正品,价格超越代理
询价
CET
2339+
TO-220
4652
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
VB
2019
TO-220
55000
绝对原装正品假一罚十!
询价
CET
2020+
TO-220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
CET
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
CET/華瑞
23+
TO-220
10000
公司只做原装正品
询价
CET/華瑞
2022+
TO-220
32500
原厂代理 终端免费提供样品
询价
更多CEP02N6A供应商 更新时间2024-6-17 16:03:00