CEM2939

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■20V,6.5A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=43mΩ@VGS=2.5V. ■-20V,-4.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=90mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabi

CEM2939

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 20V,6.5A,RDS(ON)=30mW@VGS=4.5V. RDS(ON)=43mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. -20V,-4.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=90mW@VGS=-2.5V. Lead-freeplating;R

2939

18MHzCenterFrequency

EM2939

Hi-Current,15.00Centers

LPC2939

NXPMicrocontrollersSelectionGuide

LPC2939

ARM9microcontrollerwithCAN,LIN,andUSB

LTC2939

Configurable4-and6-SupplyMonitorswithWatchdogTimer

LTC2939

Configurable4-and6-SupplyMonitorswithWatchdogTimer

LTC2939CMS

Configurable4-and6-SupplyMonitorswithWatchdogTimer

LTC2939HMS

Configurable4-and6-SupplyMonitorswithWatchdogTimer

LTC2939IMS

Configurable4-and6-SupplyMonitorswithWatchdogTimer

PN2939

AtomicTBIThrottlePositionSensorModule

TB2939HQ

45W×4-chBTLAudioPowerIC

Features •Highoutputpower •POUTMAX(1)=45W(typ.) (VCC=15.2V,f=1kHz,JEITAmax,RL=4Ω) •POUTMAX(2)=41W(typ.) (VCC=14.4V,f=1kHz,JEITAmax,RL=4Ω) •POUT(1)=24W(typ.) (VCC=14.4V,f=1kHz,THD=10,RL=4Ω) •POUT(2)=21W(typ.) (VCC=13.2

TZ2939A

CrystalUnitSMD1.6x1.226.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount1.6mmx1.2mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TZ2939B

CrystalUnitSMD1.6x1.226.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount1.6mmx1.2mmcrystalunitforuseinwireless

UDN-2939B

1.5ADARLINGTONSWITCHES