CEB65A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,45A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=18mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEP65A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,45A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=18mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CHM65A3PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE25VoltsCURRENT38Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

FGA65A3H

VCE=650V,IC=15ATrenchFieldStopIGBT

FGF65A3H

TrenchFieldStopIGBTswithFastRecoveryDiode

FGF65A3H

TrenchFieldStopIGBTswithFastRecoveryDiode

FGF65A3L

TrenchFieldStopIGBTswithFastRecoveryDiode

KGF65A3H

TrenchFieldStopIGBTswithFastRecoveryDiode

KGF65A3H

TrenchFieldStopIGBTswithFastRecoveryDiode

KGF65A3H

TrenchFieldStopIGBTswithFastRecoveryDiode

KGF65A3L

TrenchFieldStopIGBTswithFastRecoveryDiode

MGF65A3H

TrenchFieldStopIGBTswithFastRecoveryDiode

MGF65A3H

TrenchFieldStopIGBTswithFastRecoveryDiode

MGF65A3L

TrenchFieldStopIGBTswithFastRecoveryDiode