| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors EIAClass1TemperatureCompensatingCapacitors EIAClass1temperaturecompensatingcapacitorsareidealfortimingandoscillatingcircuits.Theyareconformallycoatedwithoneinchminimumradialleads.EIAClass1TemperatureCompensatingCapacitors Highlights •Smallsize •Conformallyc | CDE Cornell Dubilier Electronics | CDE | ||
Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors EIAClass1TemperatureCompensatingCapacitors EIAClass1temperaturecompensatingcapacitorsareidealfortimingandoscillatingcircuits.Theyareconformallycoatedwithoneinchminimumradialleads.EIAClass1TemperatureCompensatingCapacitors Highlights •Smallsize •Conformallyc | CDE Cornell Dubilier Electronics | CDE | ||
Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors EIAClass1TemperatureCompensatingCapacitors EIAClass1temperaturecompensatingcapacitorsareidealfortimingandoscillatingcircuits.Theyareconformallycoatedwithoneinchminimumradialleads.EIAClass1TemperatureCompensatingCapacitors Highlights •Smallsize •Conformallyc | CDE Cornell Dubilier Electronics | CDE | ||
Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors EIAClass1TemperatureCompensatingCapacitors EIAClass1temperaturecompensatingcapacitorsareidealfortimingandoscillatingcircuits.Theyareconformallycoatedwithoneinchminimumradialleads.EIAClass1TemperatureCompensatingCapacitors Highlights •Smallsize •Conformallyc | CDE Cornell Dubilier Electronics | CDE | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,11A,RDS(ON)=120mW@VGS=10V. RDS(ON)=135mW@VGS=5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V,36A,RDS(ON)=9mW@VGS=4.5V. RDS(ON)=12mW@VGS=2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=16mW@VGS=1.8V. ESDProtected:2000V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V,29A,RDS(ON)=13mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=19mW@VGS=2.5V. ESDProtected:2000V. RDS(ON)=27mW@VGS=1.8V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors EIAClass1TemperatureCompensatingCapacitors EIAClass1temperaturecompensatingcapacitorsareidealfortimingandoscillatingcircuits.Theyareconformallycoatedwithoneinchminimumradialleads.EIAClass1TemperatureCompensatingCapacitors Highlights •Smallsize •Conformallyc | CDE Cornell Dubilier Electronics | CDE | ||
Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors EIAClass1TemperatureCompensatingCapacitors EIAClass1temperaturecompensatingcapacitorsareidealfortimingandoscillatingcircuits.Theyareconformallycoatedwithoneinchminimumradialleads.EIAClass1TemperatureCompensatingCapacitors Highlights •Smallsize •Conformallyc | CDE Cornell Dubilier Electronics | CDE | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V,44A,RDS(ON)=8mW@VGS=10V. RDS(ON)=13mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) 20V,4.8A,RDS(ON)=38mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-3.0A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=145mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. S2 | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,48A,RDS(ON)=6.7mW@VGS=10V. RDS(ON)=8.7mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-36A,RDS(ON)=12mW@VGS=-10V. RDS(ON)=16mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-30A,RDS(ON)=17mW@VGS=-10V. RDS(ON)=26mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-17A,RDS(ON)=25mW@VGS=-10V. RDS(ON)=32mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,46A,RDS(ON)=7.2mW@VGS=10V. RDS(ON)=10mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,17A,RDS(ON)=5.0mW@VGS=10V. RDS(ON)=7.2mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-37A,RDS(ON)=10mW@VGS=-10V. RDS(ON)=15mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V,40A,RDS(ON)=10.2mW@VGS=10V. RDS(ON)=16mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
High Capacitance Stacked Capacitors FEATURES •Multilayerchipsceramiccapacitors •NPOdielectric •Capacitancerange:10nFto6.8μF •Voltagerange:63VDCto500VDC | EXXELIAExxelia Group EXXELIA集团 | EXXELIA |
详细参数
- 型号：
CEC
- 制造商：
Mallory Sonalert Products Inc
- 功能描述：
Cap Ceramic 1pF 50V C0G 0.25pF(4 X 3mm) Radial 2.5mm 125°C
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay |
23+ |
NA |
3574 |
专做原装正品,假一罚百! |
询价 | ||
CPLG |
D/CCALL |
1831 |
询价 | ||||
CAPLUGS |
2308+ |
477079 |
一级代理,原装正品,公司现货! |
询价 | |||
CAPLUGS |
24+25+/26+27+ |
车规-元器件 |
43788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
JAMECO |
2021+ |
DIP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
高雅 |
21+ROHS |
SMD |
234000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
Microchip |
22+ |
144WFBGA |
9000 |
原厂渠道,现货配单 |
询价 | ||
Microchip |
21+ |
144WFBGA |
13880 |
公司只售原装,支持实单 |
询价 | ||
Microchip |
23+ |
144WFBGA |
9000 |
原装正品，支持实单 |
询价 | ||
Microchip |
23+ |
20000 |
全新、原装、现货 |
询价 |
相关规格书
更多- CEC020C
- CEC-04
- CEC-044-1
- CEC050C
- CEC060D
- CEC-07X
- CEC-08 BLACK
- CEC080D
- CEC-10
- CEC101J
- CEC102040MC-R
- CEC103555MC-R
- CEC111J
- CEC120J
- CEC150J
- CEC-16 BLACK
- CEC161J
- CEC180J
- CEC-19
- CEC-1F-B
- CEC-23 BLACK
- CEC-24 BLACK
- CEC241J
- CEC270J
- CEC-29
- CEC-2FP
- CEC301J
- CEC330J
- CEC-36
- CEC390J
- CEC-78K0/KG3C
- CEC8218
- CE-C9501
- CECC30202-004
- CECC40201-002STY
- CEC-M20-V
- CEC-RWC-18664
- CEC-RWC-18684
- CEC-RWC-18886CS3248
- CEC-RWC-22235
- CECS0324V-G
- CECS0624V-G
- CECT02260F
- CED01N6
- CED01N65A
相关库存
更多- CEC030C
- CEC040C
- CEC-05
- CEC-06
- CEC-062-1
- CEC-08
- CEC-080-1
- CEC090D
- CEC100J
- CEC102040MC-F
- CEC103555MC-F
- CEC110J
- CEC-12
- CEC121J
- CEC-16
- CEC160J
- CEC-18
- CEC181J
- CEC-1F
- CEC220J
- CEC-24
- CEC240J
- CEC-26
- CEC-28
- CEC-2F
- CEC300J
- CEC-32
- CEC-3321F
- CEC360J
- CEC750J
- CEC820J
- CEC-9090
- CECBNCM5BECM
- CECC40101047SBC2K21
- CEC-M12X
- CEC-RWC-18600CS3244
- CEC-RWC-18680
- CEC-RWC-18687
- CEC-RWC-18982CS3244
- CECS0312V-G
- CECS035V0-G
- CECS065V0-G
- CECWP2W222M3
- CED01N65
- CED01N6G
