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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEB6056L	文件：653.29 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
6056	文件：39.74 Kbytes Page：1 Pages	SINGLEPOLE,THREETHROWCONNECTORIZEDSWITCHES	MICRONETICSMicronetics, Inc. Micronetics, Inc.	MICRONETICS
6056	文件：401.4 Kbytes Page：1 Pages	TESTJACKS	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
6056	文件：140.34 Kbytes Page：2 Pages	Teck901000V,3GC#68StrBC,XLPEInsM4,PVCJkt,SIAArmor,BlkPVCJkt,CSAHLSUNRES-40C ProductDescription Teck901000V,3+GConductor6+8AWG(7x14H)BareCopper,XLPEInsulationM4ColorCode,PVCInnerJacket,SteelInterlockArmor,BlackPVCOuter Jacket,CSAHLSUNRES-40C	BELDEN Belden Inc.	BELDEN
6056C	文件：76.63 Kbytes Page：2 Pages	Component16X1PAIR	ALPHAWIREAlpha Wire 阿尔法电线	ALPHAWIRE
BH6056GU	文件：354.14 Kbytes Page：6 Pages	PowermanagementLSIformobilephone	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM
C6056A	文件：74.91 Kbytes Page：1 Pages	12SP207/28TCPEPVCComputerCable	GENERALGeneral Electric 通用电气公司美国通用电气公司	GENERAL
CBT-BGA-6056	文件：427.27 Kbytes Page：5 Pages	Automatedprobemanufacturingenableslowcostandshortleadtime	IRONWOODIronwood Electronics. Lronwood电子公司	IRONWOOD
CEB6056	文件：401.17 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB6056	文件：473.04 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED6056	文件：468.3 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED6056	文件：356.33 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,76A,RDS(ON)=6.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED6056L	文件：647.37 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,78A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEM6056	文件：497.16 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,15A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEM6056	文件：423.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,15A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEM6056L	文件：653.83 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,14.5A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP6056	文件：473.04 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP6056	文件：401.17 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP6056L	文件：653.29 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU6056	文件：468.3 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	CEB6056低压MOS管	VBSEMI/台湾微碧	23+	T0-263	50000	全新原装正品现货,支持订货	询价
深圳市创新迹电子有限公司	CEB605AL	CET/華瑞	23+	TO265	6500	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	CEB605AL	CET/華瑞	23+	TO265	6500	专注配单,只做原装进口现货	询价
深圳市特顺芯科技有限公司	CEB6060	CET		TO-263	1335		询价
深圳市鹏和科技有限公司	CEB6060	CET	24+	TO-263	5000	只做原装公司现货	询价
深圳市百视威讯电子科技有限公司	CEB6060		23+	N/A	35900	正品授权货源可靠	询价
深圳市仟禧电子有限公司	CEB6060	CET/華瑞	22+	TO-263	20000	保证原装正品,假一陪十	询价
深圳市永贝尔科技有限公司	CEB6060	CET	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
深圳市航润创能电子集团有限公司	CEB6060	CET	21+	TO-263	900	原装现货假一赔十	询价
深圳市汇莱威科技有限公司	CEB6060	CET/華瑞		TO-263	265209	假一罚十原包原标签常备现货!	询价

更多CEB6056L供应商更新时间2024-5-16 11:00:00

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