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CEB140N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,137A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP140N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,137A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Lead-freeplating;RoHScompliant.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP140N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CEP140N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,137A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEWP140N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,150A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-3Ppackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FIR140N10ANFG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FIR140N10PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FIR140N10RG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FQA140N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=140A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.01Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQA140N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQH140N10

100VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQH140N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=140A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.01Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH140N10P

PolarHVHiPerFETPowerMOSFETs

IXYS

IXYS Integrated Circuits Division

IXFT140N10P

PolarHVHiPerFETPowerMOSFETs

IXYS

IXYS Integrated Circuits Division

IXTQ140N10P

PolarHT??PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXTQ140N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTT140N10P

PolarHT??PowerMOSFET

IXYS

IXYS Integrated Circuits Division

MCP140N10Y

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半导体公司

RU140N10R

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

RU140N10R

N-ChannelAdvancedPowerMOSFET

RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd

锐骏半导体深圳锐骏半导体股份有限公司

供应商型号品牌批号封装库存备注价格
CET/華瑞
24+
DIP
156768
明嘉莱只做原装正品现货
询价
23+
N/A
85600
正品授权货源可靠
询价
CET/華瑞
2022+
TO-263
50000
原厂代理 终端免费提供样品
询价
CET/華瑞
22+
DIP
12800
本公司只做进口原装!优势低价出售!
询价
CET/華瑞
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
询价
CET
24+25+/26+27+
TO-263-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
SR
23+
T0-263
5000
原装正品,假一罚十
询价
VB
20+
T0-263
33902
绝对原装正品假一罚十!
询价
CET(华瑞)
2112+
TO-263
105000
10个/管一级代理专营品牌!原装正品,优势现货,长期
询价
CET/華瑞
23+
TO-263
10000
公司只做原装正品
询价
更多CEB140N10供应商 更新时间2024-5-19 12:31:00