DESCRIPTION

The CAT28F010 is a high speed 128K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.

FEATURES

■ Fast read access time: 90/120 ns

■ Low power CMOS dissipation:

–Active: 30 mA max (CMOS/TTL levels)

–Standby: 1 mA max (TTL levels)

–Standby: 100 µA max (CMOS levels)

■ High speed programming:

–10 µs per byte

–2 Sec Typ Chip Program

■ 0.5 seconds typical chip-erase

■ 12.0V ± 5 programming and erase voltage

■ Stop timer for program/erase

■ Commercial, industrial and automotive temperature ranges

■ On-chip address and data latches

■ JEDEC standard pinouts:

–32-pin DIP

–32-pin PLCC

–32-pin TSOP (8 x 20)

■ 100,000 program/erase cycles

■ 10 year data retention

■ Electronic signature

CAT28F010LI90属于集成电路（IC） > 存储器。安森美半导体公司制造生产的CAT28F010LI90存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。