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BF505	文件：36.66 Kbytes Page：2 Pages	NPNSILICONRFTRANSISTOR NPNSiliconRFTransistor BF505isanNPNsiliconplanarRFtransistorinTO92plasticpackage(10A3DIN41868). ThetransistorisparticularlyintendedforuseinVHFamplifiersincommonemitterconfiguration,VHFmixersandVHF/UHFoscillators.	SIEMENS Siemens Ltd	SIEMENS
BFC505	文件：82.39 Kbytes Page：11 Pages	NPNwidebandcascodetransistor DESCRIPTION Cascodeamplifierwithtwodiscretediesinasurfacemount,5-pinSOT353(S-mini)package.TheamplifierisprimarilyintendedforlowpowerRFcommunicationsequipment,suchaspagersandhasaverylowfeedbackcapacitanceresultinginhighisolation. FEATURES •Smallsize •Hig	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFE505	文件：59.19 Kbytes Page：8 Pages	NPNwidebanddifferentialtransistor DESCRIPTION EmittercoupleddualNPNsiliconRFtransistorinasurfacemount,5-pinSOT353(S-mini)package.ThetransistorisprimarilyintendedforapplicationsintheRFfrontendasabalancedmixer,adifferentialamplifierinanaloganddigitalcellularphones,andincordlessphones,page	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505	文件：159.22 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505	文件：306.4 Kbytes Page：13 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505	文件：136.27 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors	JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司	JMNIC
BFG505/X	文件：148.94 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505/X	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505/X	文件：306.4 Kbytes Page：13 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505/X	文件：159.22 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505W	文件：148.94 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505W	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505W/X	文件：148.94 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505W-X	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505W-XR	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505-X	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFM505	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFM505	文件：92.89 Kbytes Page：10 Pages	DualNPNwidebandtransistor DESCRIPTION DualtransistorwithtwosiliconNPNRFdiesinasurfacemount,6-pinSOT363(S-mini)package.ThetransistorsareprimarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellularphones,cordlessphones,radardetectors,pagersandsat	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFR505	文件：120.89 Kbytes Page：12 Pages	NPN9GHzwidebandtransistor DESCRIPTION TheBFR505isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市赛美科科技有限公司	CAMERAMANTAG-505BMONO	OMRON		连接器	123500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市智亦芯科技有限公司	CameraModule3	Raspberry Pi	22+	N/A	500	智亦芯科技只做原装现货	询价
上海金庆电子技术有限公司	CAM-F550		新		5	全新原装货期两周	询价
上海市鑫鸿达电子	CAM-F550		2022+		1	全新原装货期两周	询价
瀚佳科技(深圳)有限公司	CAM-F91M10R41-8557A	MITSUMI	21+		65200		询价
深圳市大联智电子有限公司	CAM-F91M10R41-8557A	MITSUMI	2022+		7300	原装现货	询价
深圳市创新迹电子有限公司	CAM-F91M10R41-8557A	MITSUMI	23+		7300	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	CAM-F91M10R41-8557A	MITSUMI	23+		7300	专注配单,只做原装进口现货	询价
深圳市湘达电子科技有限公司	CAMFH15GC1R-8U	TAITEK	2022+	NA	10000	只做原装,价格优惠,长期供货。	询价
贸泽芯城（深圳）电子科技有限公司	CAMFH15GC1R-8U	TAITEK	21+ROHS	NA	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价

更多CAMERAMANTAG-505BMONO供应商更新时间2024-5-22 17:52:00

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