KTC3199-GR

NPNGeneralPurposeApplication

Features •HighDCCurrentGain:hFE=70~700 •ExcellenthFELinearity:hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) •LowNoise:NF=1.0dB(Typ.),10dB(Max.) •ComplementarytoKTA1267 •Marking:C3199 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSComp

KTC3199-GR

NPNGeneralPurposeApplication

KTC3199L

EPITAXIALPLANARNPNTRANSISTOR(LOWNOISEAUDIOAMPLIFIER)

LOWNOISEAUDIOAMPLIFIERAPPLICATION. FEATURES •HighDCCurrentGain:hFE=70ᴕ700. •ExcellenthFELinearity :hFE(0.1mA)/hFE(2mA)=0.95(Typ.). •LowNoise:NF=0.2dB(Typ.),3dB(Max.). •ComplementarytoKTA1267L.

KTC3199M

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features HighDCcurrentgain,excellenthFElinearity,lownoise. Applications Generalamplifierandswitchingapplication.

KTC3199-O

NPNGeneralPurposeApplication

Features •HighDCCurrentGain:hFE=70~700 •ExcellenthFELinearity:hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) •LowNoise:NF=1.0dB(Typ.),10dB(Max.) •ComplementarytoKTA1267 •Marking:C3199 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSComp

KTC3199-O

NPNGeneralPurposeApplication

KTC3199-Y

NPNGeneralPurposeApplication

KTC3199-Y

NPNGeneralPurposeApplication

Features •HighDCCurrentGain:hFE=70~700 •ExcellenthFELinearity:hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) •LowNoise:NF=1.0dB(Typ.),10dB(Max.) •ComplementarytoKTA1267 •Marking:C3199 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSComp

M3199

TiteLiquidTightCordgrips

M3199GBH

Heyco®-TiteLiquidTightCordgrips

MMBTSC3199

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintofourgroups,O,Y,G, andL,accordingtoitsDCcurrentgain. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.

PE3199

CABLEASSEMBLYRG213/U7/16MALETO7/16MALE