Description

The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. The devices are designed for use in electronic transformer for halogen lamps.

Features

■ High voltage capability

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

■ High ruggedness

Applications

■ Electronic transformers for halogen lamps

■ Flyback and forward single transistor low power converters

BULB49D属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。意法半导体（ST）集团制造生产的BULB49D晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。