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首页>BSM150GB120DN2F>芯片详情
BSM150GB120DN2F_EUPEC/欧派克_IGBT 模块 IGBT 1200V 150A安富世纪二部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
BSM150GB120DN2F
- 功能描述:
IGBT 模块 IGBT 1200V 150A
- RoHS:
否
- 制造商:
Infineon Technologies
- 产品:
IGBT Silicon Modules
- 配置:
Dual 集电极—发射极最大电压
- VCEO:
600 V
- 集电极—射极饱和电压:
1.95 V 在25
- C的连续集电极电流:
230 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
445 W
- 最大工作温度:
+ 125 C
- 封装/箱体:
34MM
供应商
- 企业:
深圳市安富世纪电子有限公司
- 商铺:
- 联系人:
赵妍
- 手机:
18100277303
- 询价:
- 电话:
0755-23991454
- 地址:
深圳市福田区华强北路1019号华强广场A栋17E
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