| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BLV1N60A | N-channel Enhancement Mode Power MOSFET | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd | ESTEK | |
GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
JEDECDO-7PACKAGE JEDECDO-7PACKAGE | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
GERMANIUMDIODES Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione | DAESAN Daesan Electronics Corp. | DAESAN | ||
SMALLSIGNALSCHOTTKYDIODE VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
600VN-ChannelMOSFET Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃ | TGS Tiger Electronic Co.,Ltd | TGS | ||
SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃ | TGS Tiger Electronic Co.,Ltd | TGS | ||
SMALLSIGNALSCHOTTKYDIODES FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency | JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司 | JINANJINGHENG | ||
SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching | WEITRONWEITRON 威堂電子科技 | WEITRON | ||
SMALLSIGNALSCHOTTKYDIODES ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
SMALLSIGNALSCHOTTKYDIODE FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio | DIOTECH Diotech Company. | DIOTECH | ||
1.2Amps,600/650VoltsN-CHANNELMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage& | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
Lowforwardvoltagedrop-lowpowerconsumption FEATURES Lowforwardvoltagedrop -lowpowerconsumption Thirtyyearsofprovenreliability -onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgicallybonded | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
45VDetectionswitchtube | SUNMATE | |||
SMALLSIGNALSCHOTTKYDIODES | SUNMATE | |||
N-CHANNELMOSFET DESCRIPTION 1N601N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC |
详细参数
- 型号：
BLV1N60A
- 制造商：
ESTEK
- 制造商全称：
ESTEK
- 功能描述：
N-channel Enhancement Mode Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ESTEK |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
BELING/上海贝岭 |
23+ |
TO92 |
15000 |
原装正品原厂发货 |
询价 | ||
KX-SLS |
21+ROHS |
SMD DIP |
800001064 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
上海贝岭 |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
询价 | |||
上海贝岭 |
23+24 |
TO-92 |
16790 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
询价 | ||
ESTEK |
22+ |
SOT-252 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
ESTEK |
2122+ |
0745 |
29860 |
全新原装正品,价格优势一片起售,可做含税 |
询价 | ||
MOT |
580 |
询价 | |||||
PHILIPS |
23+ |
TO-59 |
220 |
专营高频管模块,全新原装! |
询价 | ||
ASI |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 |
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