General description

A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band.

Features

■ Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A:

◆ Load power PL = 500 W

◆ Gain Gp ≥ 18 dB

◆ Drain efficiency ηD = 60

■ Advanced flange material for optimum thermal behavior and reliability

■ Excellent ruggedness

■ High power gain

■ Designed for broadband operation (HF/VHF band)

■ Source on underside eliminates DC isolators, reducing common-mode inductance

■ Easy power control

Applications

■ Communication transmitter applications in the UHF band

■ Industrial applications in the UHF band