| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BLF1 | Axial Lead and Cartridge Fuses - Midget | LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司 | Littelfuse | |
Axial Lead and Cartridge Fuses AxialLeadandCartridgeFuses LaminatedBodyFast-ActingTypeBLFSeries FibreBodyFast-ActingTypeBLNSeries | LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司 | Littelfuse | ||
UHF power LDMOS transistor DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangelesspackage(SOT538A)withaceramiccap.Thecommonsourceisconnectedtothemountingbase. FEATURES •Highpowergain •Easypowercontrol •Excellentruggedness •Sourceonmountingb | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
UHF power LDMOS transistor DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangepackage(SOT467C)withaceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES •Highpowergain •Easypowercontrol •Excellentruggedness •Sourceonundersideel | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
UHF power LDMOS transistor DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangepackage(SOT541A)withaceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES •Highpowergain •Easypowercontrol •Excellentruggedness •Sourceonundersideel | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
UHF power LDMOS transistor DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangepackage(SOT502A)withaceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES •Highpowergain •Easypowercontrol •Excellentruggedness •Sourceonundersideel | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Base station LDMOS transistor DESCRIPTION 125WLDMOSpowertransistorforbasestation applicationsatfrequenciesfrom800MHzto1000MHz. FEATURES •Typicalperformanceatasupplyvoltageof27V: –1-toneCW;IDQ=1000mA –Outputpower=125W –Gain=16.5dB –Efficiency=54 –EDGEoutpu | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Power LDMOS transistor Generaldescription A600WLDMOSRFpowertransistorfortransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness(VSWR40:1throughallphase | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | Ampleon | ||
Power LDMOS transistor Generaldescription A600WLDMOSRFpowertransistorfortransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness(VSWR40:1throughallphase | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | Ampleon | ||
Power LDMOS transistor Generaldescription 750WLDMOSpowertransistorinSOT539pushpullpackageforacceleratorapplications atafrequencyof1.3GHz. Featuresandbenefits Highefficiency Excellentruggedness Excellentthermalstability Easypowercontrol IntegrateddualsidedESDprotectionenab | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | Ampleon | ||
Power LDMOS transistor Generaldescription 750WLDMOSpowertransistorinSOT539pushpullpackageforacceleratorapplications atafrequencyof1.3GHz. Featuresandbenefits Highefficiency Excellentruggedness Excellentthermalstability Easypowercontrol IntegrateddualsidedESDprotectionenab | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | Ampleon | ||
HF power MOS transistor DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistordesignedforSSBtransmitterapplicationsintheHFfrequencyrange.Thetransistorisencapsulatedina4-lead,SOT123flangeenvelope,withaceramiccap.Allleadsareisolatedfromtheflange.Matchedgate-sourcevoltage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
VHF POWER MOSFET DESCRIPTION: TheASIBLF145isDesignedforGeneralPurposeClassABPowerAmplifierApplicationsupto175MHz. FEATURES: •PG=20dBTyp.at30W/28MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | ASI | ||
HF power MOS transistor DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistordesignedforSSBtransmitterapplicationsintheHFfrequencyrange.Thetransistorisencapsulatedina4-lead,SOT123Aflangepackage,withaceramiccap.Allleadsareisolatedfromtheflange. Matchedgate-sourcevoltag | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-Channel Enhancement Mode DESCRIPTION: TheASIBLF145isDesignedforGeneralPurposeClassABPowerAmplifierApplicationsupto175MHz. FEATURES: •PG=20dBTyp.at30W/28MHz •Omnigold™MetalizationSystem | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
VHF power MOS transistor DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistordesignedforindustrialandmilitaryapplicationsintheHF/VHFfrequencyrange. Thetransistorisencapsulatedina4-lead,SOT121flangeenvelope,withaceramiccap.Allleadsareisolatedfromtheflange. Amarkingcod | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
VHF power MOS transistor DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistorencapsulatedina4-lead,SOT121Bflangepackagewithaceramiccap.Allleadsareisolatedfromtheflange.Amarkingcode,showinggate-sourcevoltage(VGS)informationisprovidedformatchedpairapplications.Refertot | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp |
详细参数
- 型号：
BLF1
- 制造商：
LITTELFUSE
- 制造商全称：
Littelfuse
- 功能描述：
Axial Lead and Cartridge Fuses - Midget
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LITTELFUSE |
23+ |
NA |
25060 |
只做进口原装,终端工厂免费送样 |
询价 | ||
NXP |
1430+ |
原装正品 |
5800 |
全新原装,公司大量现货供应,绝对正品 |
询价 | ||
PHILIPS |
2022 |
223 |
原厂原装正品,价格超越代理 |
询价 | |||
HIGHEND |
60 |
AP3 |
60 |
询价 | |||
NXP |
PHI |
250 |
正品原装--自家现货-实单可谈 |
询价 | |||
NXP |
2020+ |
20 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | |||
800 |
询价 | ||||||
PHILIPS |
16+ |
高频管 |
600 |
原装现货假一罚十 |
询价 | ||
PHILIPS |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
NXP |
23+ |
SOT |
7635 |
全新原装优势 |
询价 |
相关规格书
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