FEATURES

 Internally matched to 50 

 Very wide frequency range (4 GHz at 3 dB bandwidth)

 Very flat 20 dB gain (DC to 2.9 GHz at 1 dB flatness)

 10 dBm saturated output power at 1 GHz

 High linearity (18 dBm IP3(out) at 1 GHz)

 Low current (14.6 mA)

 Unconditionally stable.

APPLICATIONS

 LNB IF amplifiers

 Cable systems

 ISM

 General purpose.

DESCRIPTION

Silicon Monolithic Microwave Integrated Circuit (MMIC)

wideband amplifier with internal matching circuit in a 6-pin

SOT363 SMD plastic package.

BGM1012属于RF/IF，射频/中频和 RFID > 射频放大器。恩智浦半导体公司制造生产的BGM1012射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。