FEATURES

• Internally matched to 50 Ω

• Very high gain (up to 37 dB at 2 Ghz)

• Sloped gain curve for optimal performance

with output into lossy cable

• 14 dBm saturated output power at 1 GHz

• High linearity (23 dBm IP3(out) at 1 GHz)

• 40 dB isolation

APPLICATIONS

• LNB IF amplifiers

• Cable systems

• General purpose.

DESCRIPTION

Silicon Monolithic Microwave Integrated Circuit (MMIC)

wideband amplifier with internal matching circuit in a 6-pin

SOT363 SMD plastic package.

BGM1011属于RF/IF，射频/中频和 RFID > 射频放大器。恩智浦半导体公司制造生产的BGM1011射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。