首页 >BFR520,215>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

B520C

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

FEATURES ◇PlasticpackagehasUnderwritersLaboratorFlammabilityClassification94V-0 ◇Forsurfacemountedapplications ◇Lowprofilepackage ◇Built-instrainrelief ◇Lowpowerloss,higheffciency ◇Metalsiliconjunction,majoritycarrierconduction ◇Highsurgecapability ◇Highcur

DSK

Diode Semiconductor Korea

BFR520T

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFR520T

NPN9GHzwidebandtransistor

DESCRIPTION NPNtransistorinaplasticSOT416(SC75)envelope. ItisintendedforwidebandapplicationssuchassatelliteTVtuners,cellularphones,cordlessphones,pagersetc.,withsignalfrequenciesupto2GHz. FEATURES •Highpowergain •Lownoisefigure •Hightransit

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFS520

NPN9GHzwidebandtransistor

DESCRIPTION NPNtransistorinaplasticSOT323envelope. ItisintendedforwidebandapplicationssuchassatelliteTVtuners,cellularphones,cordlessphones,pagersetc.,withsignalfrequenciesupto2GHz. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfre

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFS520

iscSiliconNPNRFTransistor

DESCRIPTION ·LowNoiseFigure NF=1.1dBTYP.@VCE=6V,IC=5mA,f=900MHz ·HighCurrent-Gain—BandwidthProduct fT=9GHzTYP.@VCE=6V,IC=20mA,f=1GHz APPLICATIONS ·DesignedforwidebandapplicationssuchassatelliteTVtuners,cellularphones,cordlessp

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BFS520

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFS520

NPNTransistor

FEATURES ♦CollectorCurrentCapabilityIC=70mA ♦CollectorEmitterVoltageVCEO=15V ♦Highpowergain ♦Lownoisefigure ♦Hightransitionfrequency MECHANICALDATA ♦Case:SOT-323(SC-70-3)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

BFS520

NPNSiliconRFTransistor

Description Ultrahighfrequencylownoisetransistor,planarNPNsiliconEpitaxialbipolarprocess.Withhighpowergain,lownoisefigure,largedynamicrangeandidealcurrentcharacteristics,theuseofSOT-323ultracompactchippackage,mainlyusedintheVHF,UHFandCATVhighfrequencyw

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

BFU520

NPNwidebandsiliconRFtransistor

Generaldescription NPNsiliconRFtransistorforhighspeed,lownoiseapplicationsinaplastic,4-pin dual-emitterSOT143Bpackage. TheBFU520ispartoftheBFU5familyoftransistors,suitableforsmallsignaltomedium powerapplicationsupto2GHz. Featuresandbenefits Lownoise

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFU520

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=10V(Min.) ·ComplementtoTypeBFU520 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforlowfrequencypoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BFU520A

NPNwidebandsiliconRFtransistor

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFU520W

NPNwidebandsiliconRFtransistor

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFU520X

NPNwidebandsiliconRFtransistor

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFU520XR

NPNwidebandsiliconRFtransistor

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFU520Y

DualNPNwidebandsiliconRFtransistor

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BO520LW

SCHOTTKYRECTIFIER

Features LowForwardVoltageDrop GuardRingConstructionforTransientProtection HighConductance

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

BO520WS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

[Diodes] Features ●VeryLowForwardVoltageDrop ●GuardRingConstructionforTransientProtection ●HighConductance

ETC1List of Unclassifed Manufacturers

未分类制造商

BRUS520

ULTRA-FASTRECOVERY4to6AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING

edi

edi

BS520

PhotodiodeforVisibleLight

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

BS520

PhotodiodeforVisibleLight

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

产品属性

  • 产品编号:

    BFR520,215

  • 制造商:

    NXP USA Inc.

  • 类别:

    分立半导体产品 > 晶体管 - 双极(BJT)- 射频

  • 包装:

    卷带(TR)

  • 晶体管类型:

    NPN

  • 电压 - 集射极击穿(最大值):

    15V

  • 频率 - 跃迁:

    9GHz

  • 噪声系数(dB,不同 f 时的典型值):

    1.1dB ~ 2.1dB @ 900MHz

  • 功率 - 最大值:

    300mW

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    60 @ 20mA,6V

  • 电流 - 集电极 (Ic)(最大值):

    70mA

  • 工作温度:

    175°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23(TO-236AB)

  • 描述:

    RF TRANS NPN 15V 9GHZ TO236AB

供应商型号品牌批号封装库存备注价格
NXP
17+
SOT23
5000
深圳现货价格优势
询价
23+
N/A
45780
正品授权货源可靠
询价
NXP
22+
SOP
9852
只做原装正品现货!或订货假一赔十!
询价
NXP
22+
NA
45000
加我QQ或微信咨询更多详细信息,
询价
NXP/恩智浦
2022+
SMD
7300
原装现货
询价
PhilipsSemiconducto
22+
NA
30000
100%全新原装 假一赔十
询价
NXP/恩智浦
22+
SMD
5070
全新原装,价格优势,原厂原包
询价
NXP USA Inc.
2022+
TO-236AB(SOT23)
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
NXP/恩智浦
23+
SMD
7300
专注配单,只做原装进口现货
询价
NXP-恩智浦
24+25+/26+27+
双极晶体管
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多BFR520,215供应商 更新时间2024-5-23 17:26:00