General description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.

Features

 High power gain

 Low noise figure

 High transition frequency

 Gold metallization ensures excellent reliability

Applications

 Intended for Radio Frequency (RF) front end applications in the GHz range, such as:

 analog and digital cellular telephones

 cordless telephones (Cordless Telephone (CT), Personal Communication

Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)

 radar detectors

 pagers

 Satellite Antenna TeleVision (SATV) tuners

BFG325W属于分立半导体产品 > 晶体管 - 双极（BJT）- 射频。恩智浦半导体公司制造生产的BFG325W晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。