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ATX-H310A

ATXIndustrialMotherboardwith8th/9thGenerationIntel®Core™Processor,DDR4DRAM,Option:4GLTEFunction

Features ■8th/9thGenerationIntel®Core™LGA1151Processor ■SupportsMax.TDP6Core95W ■DDR42666/2400/2133MHz,max.64GB ■TwoIndependentDisplays:HDMIx1,VGAx1,DPx1 ■DualIntel®GigabitEthernet,i210ATx1,i219Vx1 ■USB3.2Gen1portsx4,USB2.0portsx5 ■M.22280

AAEONAAEON Technology

研扬科技研扬科技(苏州)有限公司

AUSCD310H

SchottkyBarrierDiode

ZOWIEZOWIE

智威智威科技股份有限公司

AVN310N

Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

AZT310HVI

HIGHCURRENTPHASECONTROL

POSEICO

Power Semiconductors

BFG310

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310W

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310W

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG310W/XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG310W/XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310W-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFU310

N-channelsiliconfield-effecttransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BGA310

SiliconBipolarMMIC-Amplifier(Cascadable50W-gainblock9dBtypicalgainat1.0GHz9dBmtypicalP-1dBat1.0GHz3dB-bandwidth:DCto2.4GHz)

SiliconBipolarMMIC-Amplifier Preliminarydata •Cascadable50Ω-gainblock •9dBtypicalgainat1.0GHz •9dBmtypicalP-1dBat1.0GHz •3dB-bandwidth:DCto2.4GHz

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BPS310

BPS310Series-12mmUncompensatedLowPressureSensor

BournsBourns Inc.

伯恩斯(邦士)

BR310

SINGLEPHASE3.0AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams

BYTES

Bytes

BR310

SINGLEPHASE3.0AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

BR310

TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIER

VOLTAGERANGE-50to1000VoltsCURRENT-3.0Amperes FEATURES *Surgeoverloarating:50Amperespeak *Lowforwardvoltagedrop *Smallsize:simpleinstallation

DCCOMDc Components

直流元件直流元件有限公司

BR310

SINGLE-PHASESILICONBRIDGE

Features ●Surgeoverloadrating-50amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Tinnedcopperleads ●MountingPosition:Any ●Mounting:Thruholdfor#6screw

Good-Ark

Good-Ark

详细参数

  • 型号:

    BFG310W/XR T/R

  • 功能描述:

    射频双极小信号晶体管 TAPE-7 TNS-RFSS

  • RoHS:

  • 制造商:

    NXP Semiconductors

  • 配置:

    Single

  • 晶体管极性:

    NPN

  • 最大工作频率:

    7000 MHz 集电极—发射极最大电压

  • VCEO:

    15 V 发射极 - 基极电压

  • VEBO:

    2 V

  • 集电极连续电流:

    0.15 A

  • 功率耗散:

    1000 mW 直流集电极/Base Gain hfe

  • 最大工作温度:

    + 150 C

  • 封装/箱体:

    SOT-223

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
NXP
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
NXP
2339+
N/A
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NXP
2023+环保现货
原厂原装
1000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
NXP/恩智浦
22+
SOT223
20000
保证原装正品,假一陪十
询价
NXP/恩智浦
23+
SOT-223
50000
全新原装正品现货,支持订货
询价
NXP/恩智浦
2022
SOT-223
80000
原装现货,OEM渠道,欢迎咨询
询价
NXP/恩智浦
21+
SOT-223
9852
只做原装正品现货!或订货假一赔十!
询价
NXP/恩智浦
22+
SOT223
19745
终端免费提供样品 可开13%增值税发票
询价
NEXPERIA/安世
23+
12000
询价
NXP/恩智浦
22+
SOT223
19745
询价
更多BFG310W/XR T/R供应商 更新时间2024-6-19 15:00:00