零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
ICintendedforuseasaPWMcontroller | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconN-ChannelMOSFETTetrode SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SiliconN-channeldual-gateMOS-FETs | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
SiliconNChannelMOSFETTetrode(Short-channeltransistorwithhighS/CqualityfactorForlow-noise,gain-controlledinputstagesupto1GHz) Features ●Short-channeltransistorwithhighS/Cqualityfactor ●Forlow-noise,gain-controlledinputstagesupto1GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconN_ChannelMOSFETTetrode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconN-ChannelMOSFETTetrode(Short-channeltransistorwithhighS/Cqualityfactor) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
SiliconN-channeldual-gateMOS-FETs | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconN-ChannelMOSFETTetrode SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
SiliconN_ChannelMOSFETTetrode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号:
BF998T/R
- 功能描述:
TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 30MA I(D) | SOT-143
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP |
2339+ |
N/A |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
VISHAY |
23+ |
SOT-143 |
13000 |
全新原装现货 |
询价 | ||
VishayTFK |
22+23+ |
33164 |
绝对原装正品全新进口深圳现货 |
询价 | |||
VISHAY |
23+ |
SMD |
5177 |
现货 |
询价 | ||
tfk |
22+ |
500000 |
行业低价,代理渠道 |
询价 | |||
VISHAY/TFK |
SOT-143 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
INFINEON |
13+ |
SOT343 |
7200 |
特价热销现货库存 |
询价 | ||
SIEMENS |
22+ |
SOT-423 |
3600 |
绝对原装!现货热卖! |
询价 | ||
INFINEON |
24+ |
SOT343 |
5000 |
只做原装公司现货 |
询价 | ||
INFINEON |
1742+ |
SOT343 |
98215 |
只要网上有绝对有货!只做原装正品! |
询价 |
相关规格书
更多- BF998W
- BF998WR T/R
- BF999
- BF999E6327
- BF999E6327T
- BF999-E6393
- BF999E7727
- BFA.0B.160.LN
- BFA.1B.978.SC
- BFA.1E.103.BAS
- BFA.1V.100.NAZ
- BFA.2K.100.KZS
- BF-A321RD
- BF-A323RD
- BF-A325RD
- BF-A326RD
- BFA433R
- BF-A502RDBF-C502RD
- BF-A504RD
- BF-A505REBF-C505RE
- BF-A50DRD
- BF-A512RD
- BF-A514RD
- BF-A515RE
- BF-A51DRD
- BF-A521RD
- BF-A522RD
- BF-A524RD
- BF-A525RE
- BF-A52DRD
- BF-AB02RD
- BF-AB04RD
- BF-AB05RE
- BF-AB0FRD
- BF-AB32RD
- BF-AB34RD
- BF-AB35RE
- BF-AB3FRD
- BF-AF10B-K/A
- BFB
- BFB.1K.100.NAE
- BFB0305MA-A
- BFB0312HA-A
- BFB0312HA-AR00
- BFB0312HHA-AR00
相关库存
更多- BF998WR
- BF998WR,115
- BF999_07
- BF999E6327HTSA1
- BF999E6327XT
- BF999E6433HTMA1
- BF9SC
- BFA.0E.100.NAS
- BFA.1E.100.NAS
- BFA.1K.100.NAE
- BFA.2E.100.NAS
- BFA.2K.100.NAS
- BF-A322RD
- BF-A324RD
- BF-A325RE
- BF-A32DRD
- BF-A501RDBF-C501RD
- BF-A503RD
- BF-A505RDBF-C505RD
- BF-A506RD
- BF-A511RD
- BF-A513RD
- BF-A515RD
- BF-A516RD
- BF-A51XRD
- BFA522R
- BF-A523RD
- BF-A525RD
- BF-A526RD
- BF-AB01RD
- BF-AB03RD
- BF-AB05RD
- BF-AB06RD
- BF-AB31RD
- BF-AB33RD
- BF-AB35RD
- BF-AB36RD
- BF-AF10B-D/A
- BF-AF10B-P/A
- BFB.0B.100.PCSN
- BFB0305LA-TYU8
- BFB0312HA
- BFB0312HA-AF00
- BFB0312HHA-AF00
- BFB0405HHA-A