| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BF12 | Mounting flange | PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd 倍加福（北京）过程自动化倍加福（北京）过程自动化控制设备有限公司 | PF | |
BF12 | 包装：盒 类别：传感器，变送器 配件 描述：M12 DIA MOUNTING FLANGE | Pepperl+Fuchs, Inc. Pepperl+Fuchs, Inc. | Pepperl+Fuchs, Inc. | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1202,BF1202RandBF1202WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1202,BF1202RandBF1202WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1202,BF1202RandBF1202WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
Dual N-channel dual gate MOS-FET DESCRIPTION TheBF1203isacombinationoftwodifferentdualgateMOS-FETamplifierswithsharedsourceandgate2leads.Thesourceandsubstrateareinterconnected. InternalbiascircuitsenableDCstabilizationandaverygoodcross-modulationperformanceduringAGC. Integrateddiodesbetwe | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
Dual N-channel dual gate MOS-FET DESCRIPTION TheBF1204isacombinationoftwoequaldualgateMOS-FETamplifierswithsharedsourceandgate2leads.Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabilizationandaverygoodcross-modulationperformanceduringAGC.Integrateddiodesbetweent | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
Dual N-channel dual gate MOS-FET DESCRIPTION TheBF1205isacombinationoftwoequaldualgateMOS-FETamplifierswithsharedsourceandgate2leadsandanintegratedswitch.Theintegratedswitchisoperatedbythegate1biasofamplifierb.Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabil | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Dual N-channel dual gate MOS-FET Generaldescription TheBF1205CisacombinationoftwodualgateMOS-FETamplifierswithsharedsourceandgate2leadsandanintegratedswitch.Theintegratedswitchisoperatedbythegate1biasofamplifierb. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCst | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
电视 （TV）_行输出 （HA）_振荡级 （O）
- 封装形式：
直插封装
- 极限工作电压：
220V
- 最大电流允许值：
0.05A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BF298,BF299,BF258,BF259,BF337,BF422,BF658,3DG170J,
- 最大耗散功率：
0.3W
- 放大倍数：
- 图片代号：
D-8
- vtest：
220
- htest：
999900
- atest：
.05
- wtest：
.3
产品属性
- 产品编号：
BF12
- 制造商：
Pepperl+Fuchs, Inc.
- 类别：
传感器，变送器 > 配件
- 包装：
盒
- 配件类型：
安装法兰
- 描述：
M12 DIA MOUNTING FLANGE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原厂 |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
询价 | ||
Pepperl + Fuchs |
2022+ |
6 |
全新原装 货期两周 |
询价 | |||
Pepperl + Fuchs |
8544+ |
con |
107 |
现货常备产品原装可到京北通宇商城查价格 |
询价 | ||
115 |
9051 |
05+ |
1 |
原厂原装 |
询价 | ||
NXP |
13+ |
SOT143 |
94000 |
特价热销现货库存 |
询价 | ||
PHI |
SOT23-4 |
2978 |
正品原装--自家现货-实单可谈 |
询价 | |||
NXP |
2022 |
SOT143 |
6800 |
原厂原装正品,价格超越代理 |
询价 | ||
PHILIPS |
05+PB |
SOT363 |
8450 |
现货-ROHO |
询价 | ||
PHILIPS |
1993 |
2899 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
询价 | |||
PHILIPS |
1215+ |
SOT-143 |
150000 |
全新原装,绝对正品,公司大量现货供应. |
询价 |
