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BD660CS

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC

PANJITPan Jit International Inc.

强茂強茂股份有限公司

BD660CS_L2_00001

包装:散装 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 二极管 - 整流器 - 阵列 描述:SURFACE MOUNT SCHOTTKY BARRIER R

Panjit International Inc.

Panjit International Inc.

Panjit International Inc.

BD660CS_S2_00001

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 二极管 - 整流器 - 阵列 描述:SURFACE MOUNT SCHOTTKY BARRIER R

Panjit International Inc.

Panjit International Inc.

Panjit International Inc.

BD660CT

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •F

PANJITPan Jit International Inc.

强茂強茂股份有限公司

BF660

PNPSiliconRFTransistor(ForVHFoscillatorapplications)

PNPSiliconRFTransistor ●ForVHFoscillatorapplications

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BF660W

PNPSiliconRFTransistor(ForVHFoscillatorapplications)

PNPSiliconRFTransistor •ForVHFoscillatorapplications

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BFU660F

NPNwidebandsiliconRFtransistor

Generaldescription NPNsiliconmicrowavetransistorforhighspeed,lownoiseapplicationsinaplastic,4-pindual-emitterSOT343Fpackage. Featuresandbenefits ■LownoisehighlinearityRFtransistor ■Highoutputthird-orderinterceptpoint27dBmat1.8GHz ■40GHzfTsilicontechnolo

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFU660F

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFU660FWB

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BRUS660

ULTRA-FASTRECOVERY8AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISP.C.BOARDMOUNTING

edi

Electronic devices inc.

BTS660P

SmartHighsideHighCurrentPowerSwitch

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

CAT660

100mACMOSChargePumpInverter/Doubler

DESCRIPTION TheCAT660isacharge-pumpvoltageconverter.Itwillinverta1.5Vto5.5Vinputtoa-1.5Vto-5.5Voutput.Onlytwoexternalcapacitorsareneeded.Withaguaranteed100mAoutputcurrentcapability,theCAT660canreplaceaswitchingregulatoranditsinductor.LowerEMIisachiev

Catalyst

Catalyst Semiconductor

CAT660

CatalystSemiconductor

I2CInterfaced16-bitLEDDimmer,I2CInterfaced16-bitLEDBlinker Features ■256discretebrightnessstepsforeasyLEDdimmingandcolormixing ■twoprogrammableblinkingratebetween0.625secand1.6secforCAT9532;0.02secand6.4secforCAT9552 ■eliminatesrepeatedcommand

Catalyst

Catalyst Semiconductor

CAT660

100mACMOSChargePumpInverter/Doubler

Catalyst

Catalyst Semiconductor

CAT660

100mACMOSChargePumpInverter/Doubler

Description TheCAT660isacharge−pumpvoltageconverter.Itwillinverta1.5Vto5.5Vinputtoa−1.5Vto−5.5Voutput.Onlytwoexternalcapacitorsareneeded.Withaguaranteed100mAoutputcurrentcapability,theCAT660canreplaceaswitchingregulatoranditsinductor.LowerEMIisa

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT660

100mACMOSChargePumpInverter/Doubler

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT660B

100mACMOSChargePumpInverter/Doubler

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT660ELA

100mACMOSChargePumpInverter/Doubler

Catalyst

Catalyst Semiconductor

CAT660ELA

100mACMOSChargePumpInverter/Doubler

Description TheCAT660isacharge−pumpvoltageconverter.Itwillinverta1.5Vto5.5Vinputtoa−1.5Vto−5.5Voutput.Onlytwoexternalcapacitorsareneeded.Withaguaranteed100mAoutputcurrentcapability,theCAT660canreplaceaswitchingregulatoranditsinductor.LowerEMIisa

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT660ELA

100mACMOSChargePumpInverter/Doubler

Description TheCAT660isacharge−pumpvoltageconverter.Itwillinverta1.5Vto5.5Vinputtoa−1.5Vto−5.5Voutput.Onlytwoexternalcapacitorsareneeded.Withaguaranteed100mAoutputcurrentcapability,theCAT660canreplaceaswitchingregulatoranditsinductor.LowerEMIisa

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    BD660CS

  • 制造商:

    PANJIT

  • 制造商全称:

    Pan Jit International Inc.

  • 功能描述:

    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

供应商型号品牌批号封装库存备注价格
PANJIT
23+
TO-252
37650
全新原装真实库存含13点增值税票!
询价
PANJIT
23+
TO-252
10000
公司只做原装正品
询价
PANJIT/ 强茂
22+
TO-252
6000
十年配单,只做原装
询价
PANJIT/ 强茂
22+
TO-252
25000
只做原装进口现货,专注配单
询价
PANJIT
22+23+
TO-252(DP
21967
绝对原装正品全新进口深圳现货
询价
PANJIT/强茂
23+
TO-252(DPAK)
10000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
24+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
询价
TO-220
10000
全新
询价
N/A
23+
原厂封装
5177
现货
询价
SGS
23+
20000
正品原装货价格低qq:2987726803
询价
更多BD660CS供应商 更新时间2024-9-20 11:45:00