| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
COMPLEMENTARYSILICONPOWERTRANSISTORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
TO-126Plastic-EncapsulateTransistors FEATURES ComplementtoBD234/BD236/BD238respectively | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
80V,NPNTRANSISTORS DESCRIPTION TheUTCBD237isanNPNtransistor.itusesUTC’sadvancedtechnologytoprovidecustomerswithhighcollector-emitterbreakdownvoltage,etc. FEATURES *ComplementtoUTCBD238respectively *Highcollector-emitterbreakdownvoltage | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
EPITAXIALSILICONPOWERTRANSISTORS EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications | CDIL CDIL | CDIL | ||
NPNPlastic-EncapsulateTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •PowerDissipation:PCM=1.25W,Ta=25°C •CollectorCurrent:IC=2A •ComplementtoBD234/236/238respectively •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Epoxy | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltage V(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconNPNPowerTransistor DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNtransistorinaTO-126PlasticPackage. Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features ComplementarypairwithBD238. Applications Mediumpowerlinearandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
LowvoltageNPNpowertransistors Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypeisBD238. Features ■Lowsaturationvoltage ■NPNtransistors Applications ■Audio, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PlasticMediumPowerBipolarTransistors PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;> | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNEpitaxialPlanarTransistors NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | WEITRON | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
TO-126Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃ | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
MediumPowerLinearandSwitchingApplications MediumPowerLinearandSwitchingApplications •ComplementtoBD234/236/238respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PlasticMediumPowerSiliconNPNTransistor PlasticMediumPowerSiliconNPNTransistor ...designedforusein5.0to10Wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION TheBD235andBD237aresiliconepitaxial-baseNPNpowertransistorsinJedecSOT-32plasticpackageintededforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBD236andBD238respectively. ■SGS-THOMSONPREFERREDSALESTYPES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedformediumpowerlinearandswitchingapplications. | DCCOMDc Components 直流元件直流元件有限公司 | DCCOM |
产品属性
- 产品编号：
BD237-BP
- 制造商：
Micro Commercial Co
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
卷带（TR）
- 晶体管类型：
NPN
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
600mV @ 100mA，1A
- 电流 - 集电极截止（最大值）：
100µA（ICBO）
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
40 @ 150mA，2V
- 频率 - 跃迁：
3MHz
- 工作温度：
150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-225AA，TO-126-3
- 供应商器件封装：
TO-126
- 描述：
TRANS NPN 80V 2A TO126
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Micro Commercial Co |
2022+ |
- |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Micro Commercial Co |
24+ |
TO-225AA,TO-126-3 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
NXP/恩智浦 |
2021+ |
TO126 |
28888 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
ON |
08+(pbfree) |
TO-225 |
8866 |
询价 | |||
ON |
15+ |
TO126 |
93500 |
现货-ROHO |
询价 | ||
ON |
2020+ |
TO-126 |
3000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ON |
23+ |
TO-225 |
5000 |
原装正品,假一罚十 |
询价 | ||
ON |
11+ |
5500 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
询价 | |||
ON |
17+ |
TO-225 |
3000 |
全新原装环保现货 |
询价 | ||
ON |
23+ |
TO-225 |
22250 |
询价 |
