BD139-10

NPN power transistors

DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesinhi-fiamplifiersandtelevisioncircuits.

BD139-10

NPN SILICON TRANSISTORS

NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance

BD139-10

Power Transistors NPN Silicon 45,60,80 Volts

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC=

BD139-10

NPN Plastic Encapsulated Transistor

FEATURES •Highcurrent •ComplementtoBD136,BD138andBD140

BD139-10

Complementary low voltage transistor

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

BD139-10

Complementary low voltage transistor

Features ■Productsarepre-selectedinDCcurrentgain Application ■Generalpurpose Description Theseepitaxialplanartransistorsaremountedin theSOT-32plasticpackage.Theyaredesigned foraudioamplifiersanddriversutilizing complementaryorquasi-complementarycircuits.

BD139-10

NPN SILICON TRANSISTORS

BD139-10

Complementary low voltage transistor

BD139-10

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-225AA，TO-126-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1.5A SOT32

BD139-10-BP

包装：卷带（TR） 封装/外壳：TO-225AA，TO-126-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1.5A TO126

BB-139-10

Krimptite??RingTongueTerminalfor14-16AWGWire

BB-139-10T

Krimptite??RingTongueTerminalfor14-16AWGWire