首页 >BCP51-16,115>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BCP51-16,115 | 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-261-4，TO-261AA 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 45V 1A SOT223 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | |
45V,1APNPmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V/60V/80V,1APNPmediumpowertransistors Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsolderablesidepads. Featuresandbenefits ■HighcollectorcurrentcapabilityIC | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V,1APNPmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •ReducedPrinted-CircuitBoard(PCB)arearequirements •Exposedheatsinkforexcellentthermalandelectricalconductivity •Twocurrentgainselections •LeadlessverysmallSMDplasticpackagewithmediumpowercapabili | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
PNPSiliconEpitaxialPlanarTransistor Features ®HighCollectorCurrent ®LowCollector-emitterSaturationVoltage | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
45V,1APNPmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
PNPmediumpowertransistors DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplements:BCP54,BCP55andBCP56. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Mediumpower(max.1.3W). APPLICATIONS •Audio,telephonyandautomotiveapplications •Thickandthin-filmcircuits | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
PNPSiliconAFTransistors(ForAFdriverandoutputstagesHighcollectorcurrent) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENS Siemens Ltd | SIEMENS | ||
PNPSiliconAFTransistors PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
PNPSiliconAFTransistors | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
PNPPlastic-EncapsulateTransistors Features •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
PNPSiliconAFTransistors | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
-1A,-45VPNPPlasticEncapsulateTransistor FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
PNPPlasticEncapsulateTransistor | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
45V,1APNPmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V,1ANPNmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V,1APNPmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
PNPMediumPowerTransistors Features ●NPNComplementstoBCX54,BCX55,BCX56 ●LowVoltage ●HighCurrent | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
Plastic-EncapsulateTransistors FEATURES •IC=-1AContinuousCollectorCurrent •LowSaturationVoltageVCE(sat) | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | HOTTECH | ||
PNPPlastic-EncapsulateTransistors | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC |
产品属性
- 产品编号：
BCP51-16,115
- 制造商：
Nexperia USA Inc.
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 晶体管类型：
PNP
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
500mV @ 50mA，500mA
- 电流 - 集电极截止（最大值）：
100nA（ICBO）
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
100 @ 150mA，2V
- 频率 - 跃迁：
145MHz
- 工作温度：
150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
TO-261-4，TO-261AA
- 供应商器件封装：
SOT-223
- 描述：
TRANS PNP 45V 1A SOT223
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
安世(Nexperia) |
23+ |
SOT-223 |
5609 |
询价 | |||
Nexperia(安世) |
23+ |
SOT-223 |
1612 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
NEXPERIA |
23+ |
Tube |
75000 |
郑重承诺只做原装进口现货 |
询价 | ||
NXP |
38000 |
询价 | |||||
NEXPERIA/安世 |
19+ |
20000 |
向鸿专营TI ADI,代理渠道可订货 |
询价 | |||
NXP |
22+ |
SOP |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
Nexperia(安世) |
2112+ |
SOT-223 |
105000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
NEXPERIA/安世 |
21+ |
4970 |
询价 | ||||
NEXPERIA/安世 |
标准封装 |
54002 |
一级代理原装正品现货期货均可订购 |
询价 | |||
NEXPERIA |
22+ |
N/A |
51800 |
优势价格原装现货提供BOM一站式配单服务 |
询价 |
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