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BC860CW

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC860CW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

BC860CW

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC847W,BC848W,BC849W,BC850W(NPN)

SIEMENS

Siemens Ltd

BC860CW

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BC860CW

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC860W

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC860W

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BC860W

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC860W

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

BC860W

PNPGeneralPurposeTransistors

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●ComplementstoBC849WandBC850W.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BC860W

PNPGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●ComplementstoBC849WandBC850W.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BC860W

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BC860W

PNPTransistors

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BC860W

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forgeneralpurposeandswitchingapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

BD860CS

DPAKSURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BD860CS

8.0ASCHOTTKYBARRIERDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

BD860CT

8.0ASCHOTTKYBARRIERDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

BD860CT

THROUGHHOLEMOUNTSCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BD860S

DPAKSURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BD860T

THROUGHHOLEMOUNTSCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity

PANJITPANJIT International Inc.

强茂強茂股份有限公司

详细参数

  • 型号:

    BC860CMTF

  • 功能描述:

    两极晶体管 - BJT

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ON/安森美
20+
SOT-23
120000
原装正品 可含税交易
询价
安森美
2002
SOP8
65000
原装正品假一罚万
询价
ON/安森美
23+
12000
询价
TY/台灣半導体
23+
SOT23-3
6000
专注配单,只做原装进口现货
询价
ON-安森美
24+25+/26+27+
SOT-23.贴片
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
TY/台灣半導体
23+
SOT23-3
6000
专注配单,只做原装进口现货
询价
PHILIPS
23+
SOT-23
31000
全新原装现货
询价
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
NXP
2023+
SOT-23
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
MAKOSEMI
2021+
SOT-23
800004020
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
更多BC860CMTF供应商 更新时间2024-6-3 14:03:00