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BB1

COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching TheBB1SeriesisanNtypesmallsignaltransistorandenablesthereductionofcomponentcountsanddownsizingofsetsduetoon-chipresistors.Thistransistorisespeciallyidealforuseinhouseholdelectronicapplianc

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

BB1

Single Row Terminal Blocks Continued

TerminalBlocks-SingleRow CoverOptions-SingleRow

COOPER

科普斯株洲市科普斯科技有限公司

BB1000-EU

Single Phase AC Power Analyzer Datasheet

SinglePhaseACPowerAnalyzerDatasheet TheTektronixPA1000isasingle-phase,single-channelpoweranalysissolutionthatisoptimizedforfast,efficient,andaccuratepowerconsumptiontestingtointernationalstandards.Itscompactsize,DMM-likeuser-interface,graphicaldisplay,andpower

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

BB1000-NA

Single Phase AC Power Analyzer Datasheet

SinglePhaseACPowerAnalyzerDatasheet TheTektronixPA1000isasingle-phase,single-channelpoweranalysissolutionthatisoptimizedforfast,efficient,andaccuratepowerconsumptiontestingtointernationalstandards.Itscompactsize,DMM-likeuser-interface,graphicaldisplay,andpower

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

BB1000-UK

Single Phase AC Power Analyzer Datasheet

SinglePhaseACPowerAnalyzerDatasheet TheTektronixPA1000isasingle-phase,single-channelpoweranalysissolutionthatisoptimizedforfast,efficient,andaccuratepowerconsumptiontestingtointernationalstandards.Itscompactsize,DMM-likeuser-interface,graphicaldisplay,andpower

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

BB1000-UN

Four-channel, Multi-phase AC/DC Power Analyzer

Four-channel,Multi-phaseAC/DCPowerAnalyzer TheTektronixPA3000isaonetofourchannelpoweranalyzerthatisoptimizedfortestingtoday’ssingleandmulti-phase,highefficiencypowerconversionproductsanddesigns.Useittoquicklyvisualize,analyze,anddocumentpowerefficiency,ene

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

BB101C

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

BB101C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi, Ltd.

日立公司

BB101CAU-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

BB101M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi, Ltd.

日立公司

BB101M

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

BB101MAU-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

BB102C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.1dBtyp.atf=900MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;CMPAK-4(SOT-

HitachiHitachi, Ltd.

日立公司

BB102M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.1dBtyp.atf=900MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

HitachiHitachi, Ltd.

日立公司

BB1110RC

Resistor capacitor network Thick film resistors Ceramic chip capacitors

DISCRIPTION ModelBB1110RCisdesignedforterminatinghigh-speedmemorybuses.Ideallysuitedforlocaldecouplingofdatalinedrivers.Thesespecialtynetworksemploysolderballsforsurfacemountflipchipattachment.Theiruniqueconstructionyieldsextremelylowcapacitanceandinductance

BITECH

瑞谷拜特上海瑞谷拜特软件技术有限公司

BB1110RC13

Resistor capacitor network Thick film resistors Ceramic chip capacitors

DISCRIPTION ModelBB1110RCisdesignedforterminatinghigh-speedmemorybuses.Ideallysuitedforlocaldecouplingofdatalinedrivers.Thesespecialtynetworksemploysolderballsforsurfacemountflipchipattachment.Theiruniqueconstructionyieldsextremelylowcapacitanceandinductance

BITECH

瑞谷拜特上海瑞谷拜特软件技术有限公司

BB1110RC7

Resistor capacitor network Thick film resistors Ceramic chip capacitors

DISCRIPTION ModelBB1110RCisdesignedforterminatinghigh-speedmemorybuses.Ideallysuitedforlocaldecouplingofdatalinedrivers.Thesespecialtynetworksemploysolderballsforsurfacemountflipchipattachment.Theiruniqueconstructionyieldsextremelylowcapacitanceandinductance

BITECH

瑞谷拜特上海瑞谷拜特软件技术有限公司

BB112

Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ??8.0 V)

SiliconVariableCapacitanceDiode ●ForAMtuningapplications ●Specifiedtuningrange1…8.0V

SIEMENS

Siemens Ltd

BB119

Variable capacitance diode

DESCRIPTION TheBB119isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedinthehermeticallysealedleadedglassSOD27(DO-35)package. FEATURES •HermeticallysealedleadedglassSOD27(DO-35)package •C10:17pF;ratio:1.3. APPLICATIONS •Automaticfrequen

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BB130

AM variable capacitance diode

DESCRIPTION TheBB130isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD69(TO-92variant)leadedplasticpackage. FEATURES •Matchedto3 •Leadedplasticpackage •C28:18pF;ratio:27. APPLICATIONS •ElectronictuninginAMradioapplications

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

晶体管资料

  • 型号:

    BB11A,B

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    UJT-P

  • 性质:

  • 封装形式:

    直插封装

  • 极限工作电压:

  • 最大电流允许值:

    0.002A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    4

  • 可代换的型号:

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    D-13

  • vtest:

    0

  • htest:

    999900

  • atest:

    .002

  • wtest:

    0

详细参数

  • 型号:

    BB1

  • 制造商:

    Carlo Gavazzi

供应商型号品牌批号封装库存备注价格
NXP/恩智浦
22+
SOD523
62420
郑重承诺只做原装进口现货
询价
NXP
1809+
SOD-323
16750
就找我吧!--邀您体验愉快问购元件!
询价
PHI
03+
10
询价
HITACHI
2016+
SOT-143
5500
只做原装,假一罚十,公司可开17%增值税发票!
询价
NXP/恩智浦
21+
SOD323
19000
只做正品原装现货
询价
BB104
75
75
询价
NXP(恩智浦)
21+
6000
只做原装正品,卖元器件不赚钱交个朋友
询价
PHILIPS
22+
NA
6000
全新原装品牌专营
询价
NXP
22+
SMD
2789
全新原装自家现货!价格优势!
询价
PHIL
23+
NA
11770
专做原装正品,假一罚百!
询价
更多BB1供应商 更新时间2024-5-28 10:18:00