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BA299中文资料PDF规格书

BA299
厂商型号

BA299

功能描述

512Mb C-die NOR FLASH

文件大小

1.5089 Mbytes

页面数量

84

生产厂商 Samsung Group
企业简称

Samsung三星

中文名称

三星半导体官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-5-21 13:34:00

BA299规格书详情

GENERAL DESCRIPTION

The K8A(10/11/12/13)15E featuring single 1.8V power supply is a 512Mbit Muxed Burst Multi Bank Flash Memory organized as 32Mx16. The memory architecture of the device is designed to divide its memory arrays into 512blocks(Uniform block part)/515blocks(Boot block part) with independent hardware protection. This block architecture provides highly flexible erase and program capability. The K8A(10/11/12/13)15E NOR Flash consists of sixteen banks. This device is capable of reading data from one bank while programming or erasing in the other bank. Regarding read access time, the K8A10/1215E provides an 11ns burst access time and an 95ns initial access time at 66MHz.

FEATURES

• Single Voltage, 1.7V to 1.95V for Read and Write operations

• Organization

- 33,554,432 x 16 bit (Word Mode Only)

• Read While Program/Erase Operation

• Multiple Bank Architecture

- 16 Banks (32Mb Partition)

• OTP Block : Extra 512-Word block

• Read Access Time (@ CL=30pF)

- Asynchronous Random Access Time : 100ns

- Synchronous Random Access Time :95ns

- Burst Access Time :

11ns(66Mhz) / 9ns(83Mhz) / 7ns (108MHz) / 6ns (133MHz)

• Page Mode Operation

16Words Page access allows fast asynchronous read Page Read Access Time :

18ns(66/83Mhz) / 15ns(108/133Mhz)

• Burst Length :

- Continuous Linear Burst

- Linear Burst : 8-word & 16-word with Wrap

• Block Architecture

- Uniform block part (K8A(10/11/12/13)15EZC) :

Five hundred twelve 64Kword blocks

- Boot block part (K8A(10/11/12/13)15ET(B)C) :

Four 16Kword blocks and five hundred eleven 64Kword blocks (Bank 0 contains four 16 Kword blocks and thirty-one 64Kword blocks, Bank 1 ~ Bank 15 contain four hundred eighty 64Kword blocks)

• Reduce program time using the VPP

• Support 512-word Buffer Program

• Power Consumption (Typical value, CL=30pF)

- Synchronous Read Current : 35mA

- Program/Erase Current : 25mA

- Read While Program/Erase Current : 45mA

- Standby Mode/Auto Sleep Mode : 30uA

• Block Protection/Unprotection

- Using the software command sequence

- Last two boot blocks are protected by WP=VIL

(Boot block part : K8A(10/11/12/13)15ET(B)C)

- Last one block (BA511) is protected by WP=VIL

(Uniform block part : K8A(10/11/12/13)15EZC)

- All blocks are protected by VPP=VIL

• Handshaking Feature

- Provides host system with minimum latency by monitoring RDY

• Erase Suspend/Resume

• Program Suspend/Resume

• Unlock Bypass Program/Erase

• Hardware Reset (RESET)

• Deep Power Down Mode

• Data Polling and Toggle Bits

- Provides a software method of detecting the status of program or erase completion

• Endurance

- 100K Program/Erase Cycles Minimum

• Extended Temperature : -25°C ~ 85°C

• Support Common Flash Memory Interface

• Output Driver Control by Configuration Register

• Low Vcc Write Inhibit

• Package : TBD

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