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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
11013	文件：401.4 Kbytes Page：1 Pages	TESTJACKS	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2
11013-R	文件：401.4 Kbytes Page：1 Pages	TESTJACKS	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2
AC11013	文件：132.2 Kbytes Page：5 Pages	DUAL4INPUTNANDSCHMITTTRIGGER DESCRIPTION The74AC/ACT11013high-performanceCMOSdevicescombineveryhighspeedandhighoutputdrivecomparabletothemostadvancedTTLfamilies.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
ACE11013A	文件：348.55 Kbytes Page：7 Pages	P-ChannelEnhancementModeMOSFET	ACE ACE Technology Co., LTD.	ACE
ACT11013	文件：132.2 Kbytes Page：5 Pages	DUAL4INPUTNANDSCHMITTTRIGGER DESCRIPTION The74AC/ACT11013high-performanceCMOSdevicescombineveryhighspeedandhighoutputdrivecomparabletothemostadvancedTTLfamilies.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
L-11013	文件：26.47 Kbytes Page：1 Pages	CURRENTSENSEINDUCTORS	RHOMBUS-IND Rhombus Industries Inc.	RHOMBUS-IND
MJ11013	文件：15.53 Kbytes Page：1 Pages	BipolarPNPDeviceinaHermeticallysealedTO3	SEME-LAB Seme LAB	SEME-LAB
MJ11013	文件：157.15 Kbytes Page：4 Pages	DARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC–20Adc •MonolithicConstructionwithBuilt–inBaseEmitterShuntResistor •JunctionTemperatureto+200°C	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJ11013	文件：53.51 Kbytes Page：2 Pages	iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-90V(Min.) •HighDCCurrentGain-:hFE=1000(Min.)@IC=-20A •LowCollectorSaturationVoltage-:VCE(sat)=-3.0V(Max.)@IC=-20A •ComplementtoTypeMJ11014 APPLICATIONS •Designedforuseasoutputdevicesincomplementary	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MJ11013	文件：54.14 Kbytes Page：1 Pages	PowerTransistors PowerTransistors TO-3Case(Continued)	CentralCentral Semiconductor Corp 美国中央半导体	Central
MJ11013	文件：140.07 Kbytes Page：3 Pages	POWERTRANSISTORS(30A,60-120V,200W) COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGainhFE=1000(Min)@IC=20A •MonolithicConstructionwithBuilt−inBaseEmitterShun	MOSPEC MOSPEC	MOSPEC
MJ11013	文件：157.15 Kbytes Page：4 Pages	30AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON60.120VOLTS200WATTS High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain-hFE=1000(Min)@IC−20Adc •MonolithicConstructionwithBuilt−inBaseEmitterShuntResistor •JunctionTemperatureto+200C	MotorolaMotorola, Inc 摩托罗拉	Motorola
MJ11013	文件：21.75 Kbytes Page：1 Pages	PNPSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS) PNPSILICONDARLINGTONTRANSISTOR SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS	WINGSWing Shing Computer Components Wing Shing Computer Components	WINGS
MJ11013	文件：96.68 Kbytes Page：2 Pages	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: HighGainDarlingtonPerformance HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
PS11013	文件：254.53 Kbytes Page：3 Pages	PatchLead-CAT5E PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
PS11013	文件：414.27 Kbytes Page：6 Pages	ApplicationSpecificIntelligentPowerModuleFLAT-BASETYPEINSULATEDPACKAGE INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •Circuitfordynamicbrakingofmotorregenerativeenergy. •3-phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCON	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
PS11013	文件：407.36 Kbytes Page：6 Pages	FLAT-BASETYPEINSULATEDTYPE INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •Circuitfordynamicbrakingofmotorregenerativeenergy. •3-phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCON	POWEREX POWEREX	POWEREX

详细参数

型号：
B11013
制造商：
ANTEX ELECTRONICS
功能描述：
3MM BIT FOR MIN IRON

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	B1101NG-20C-000333	HARVATEK	22+	SMD	5623	只做原装正品现货!或订货假一赔十!	询价
深圳市航润创能电子集团有限公司	B1101NG-20C-000333	HARVATEK	21+	SMD	2000	原装现货假一赔十	询价
深圳市振芯物联科技有限公司	B1101NG-20C-000333	HARVATEK	22+	SMD	32350	原装正品假一罚十公司现货	询价
深圳市安富世纪电子有限公司	B1101NG-20C-000333	HARVATEK	21+	SMD	50000	全新原装正品现货,支持订货	询价
深圳市赛能新源半导体有限公司	B1101NG-20C-000333	HARVATEK	21+	SMD	56000	公司进口原装现货批量特价支持	询价
深圳市环球伟业电子有限公司	B1101NG-20C-000333	Harvatek/Harvatek/宏齐科技股份	21+	SMD	2000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市威雅利发展有限公司	B1101NG-20C-000333	HARVATEK	17+	SMD	2000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市振宏微科技有限公司	B1101NG-20C-000333	HARVATEK	23+	SMD	28000	原装正品	询价
深圳市能元时代电子有限公司	B1101NG-20C-000333	HARVATEK	23+	SMD	12800	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市德创芯微科技有限公司	B1101NG-20C-000333	HARVATEK	17+	SMD	2000	全新原装,支持实单,假一罚十,德创芯微	询价

更多B11013供应商更新时间2024-6-7 16:36:00

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