AM3400

MOSFET30VN-CHANNELENHANCEMENTMODEPOWERMOSFET

DESCRIPTION VDS=30V 12V ID(A)=5.8A R DS(ON)

AM3400A

MOSFET30VN-CHANNELENHANCEMENTMODE

DESCRIPTION AM3400AistheN-ChannelenhancementmodepowerfieldeffecttransistorsareusingtrenchDMOStechnology.Thisadvancedtrenchtechnologydevicesarewellsuitedforhighefficiencyfastswitchingapplications,lowin-linepowerlossareneededinsmalloutlinesurfacemountpackage.

AM3400N

N-Channel200-V(D-S)MOSFET

AML3400

HIGHDEFINITIONTOTALSOLUTIONHDA/VPROCESSOR

[AmlogicInc.] HIGHDEFINITIONTOTALSOLUTIONHDA/VPROCESSOR

AMS3400SRG

SuperhighdensitycelldesignforextremelylowRDS(ON)

DESCRIPTION TheAMS3400SRGistheN-Channellogicenhancementmodepowerfieldeffecttransistorisproducedusinghighcelldensity,DMOStrenchtechnology. Thishigh-densityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuitedforlowvoltageap

AN3400

AnalysisandsimulationofaBJTcomplementarypairinaself-oscillatingCFLsolution

AO3400

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3400usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO3400isPb-free(meetsROHS&Sony259spec

AO3400

30VN-ChannelEnhancementModeMOSFET

30VN-ChannelEnhancementModeMOSFET VDS=30V RDS(ON),Vgs@10V,Ids@5.8A

AO3400

N-Channelenhancementmodefieldeffecttransistor

■Features ●VDS(V)=30V ●ID=5.8A(VGS=10V) ●RDS(ON)28m(VGS=10V) ●RDS(ON)33m(VGS=4.5V) ●RDS(ON)52m(VGS=2.5V)

AO3400

N-CHANNELMOSFETinaSOT-23PlasticPackage

Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features VDS(V)=30V ID=5.8A(VGS=10V) RDS(ON)

AO3400

30VN-ChannelMOSFET

AO3400

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

AO3400

N-ChannelEnhancementMOSFET

Features VDS(V)=30V ID=5.8A(VGS=10V) RDS(ON)m(VGS=10V) RDS(ON)3m(VGS=4.5V) RDS(ON)52m(VGS=2.5V)

AO3400A

N-ChannelEnhancementMode

Features VDS(V)=30V ID=5.8A(VGS=10V) RDS(ON)27m(VGS=10V) RDS(ON)31m(VGS=4.5V) RDS(ON)48m(VGS=2.5V)

AO3400A

N-ChannelEnhancementMode

Features VDS(V)=30V ID=5.8A(VGS=10V) RDS(ON)

AO3400A

30VN-ChannelMOSFET

AO3400A

30VN-ChannelMOSFET

GeneralDescription TheAO3400AcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Productsummary VDS30V ID(atVGS=10V)5.7A RDS(ON

AO3400A

N-Channelenhancementmodefieldeffecttransistor

■Features ●VDS(V)=30V ●ID=5.7A(VGS=10V) ●RDS(ON)

AO3400A

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3400AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO3400AisPb-free(meetsROHS&Sony259specifications). Features •VDS(V)=30V •

AO3400A

N-ChannelEnhancementModePowerMOSFET

Description TheAO3400AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures ●VDS=30V,ID=5.8A RDS(ON)