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BF998

SiliconN_ChannelMOSFETTetrode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BF998

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

BF998

SiliconN-channeldual-gateMOS-FETs

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BF998

SiliconNChannelMOSFETTetrode(Short-channeltransistorwithhighS/CqualityfactorForlow-noise,gain-controlledinputstagesupto1GHz)

Features ●Short-channeltransistorwithhighS/Cqualityfactor ●Forlow-noise,gain-controlledinputstagesupto1GHz

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BF998

SiliconN-ChannelMOSFETTetrode

SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BF998

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

VishayVishay Siliconix

威世科技威世科技半导体

BF998

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BF998A

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

VishayVishay Siliconix

威世科技威世科技半导体

BF998A

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

BF998B

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

BF998R

SiliconN_ChannelMOSFETTetrode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BF998R

SiliconN-channeldual-gateMOS-FETs

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BF998R

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

BF998R

SiliconN-ChannelMOSFETTetrode(Short-channeltransistorwithhighS/Cqualityfactor)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BF998R

SiliconN-ChannelMOSFETTetrode

SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BF998R

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

VishayVishay Siliconix

威世科技威世科技半导体

BF998R

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BF998RA

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

VishayVishay Siliconix

威世科技威世科技半导体

BF998RA

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

BF998RAW

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

VishayVishay Siliconix

威世科技威世科技半导体

晶体管资料

  • 型号:

    AT998

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    微型 (Min)

  • 封装形式:

  • 极限工作电压:

    60V

  • 最大电流允许值:

    0.15A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

  • 可代换的型号:

  • 最大耗散功率:

  • 放大倍数:

    β>=2000

  • 图片代号:

    NO

  • vtest:

    60

  • htest:

    999900

  • atest:

    0.15

  • wtest:

    0

供应商型号品牌批号封装库存备注价格
ST意法半导体
24+23+
TQFP
12580
16年现货库存供应商终端BOM表可配单提供样品
询价
ST/意法
23+
NA/
3736
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ATMEL/爱特梅尔
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
ATMEL/爱特梅尔
23+
BGA
98900
原厂原装正品现货!!
询价
ATMEL/爱特梅尔
24+
BGA
96880
只做原装,欢迎来电资询
询价
ATMEL
22+
DIP
8200
原装现货库存.价格优势!!
询价
ATMEL/爱特梅尔
23+
SOP8
50000
全新原装正品现货,支持订货
询价
ATMEL/爱特梅尔
2022
SOP8
80000
原装现货,OEM渠道,欢迎咨询
询价
ATMEL
21+
SOP8
9866
询价
AT
23+
DIP
4200
正品原装货价格低qq:2987726803
询价
更多AT998供应商 更新时间2024-10-31 10:36:00