零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SiliconN_ChannelMOSFETTetrode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconN-channeldual-gateMOS-FETs | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SiliconNChannelMOSFETTetrode(Short-channeltransistorwithhighS/CqualityfactorForlow-noise,gain-controlledinputstagesupto1GHz) Features ●Short-channeltransistorwithhighS/Cqualityfactor ●Forlow-noise,gain-controlledinputstagesupto1GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
SiliconN-ChannelMOSFETTetrode SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconN_ChannelMOSFETTetrode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconN-channeldual-gateMOS-FETs | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconN-ChannelMOSFETTetrode(Short-channeltransistorwithhighS/Cqualityfactor) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
SiliconN-ChannelMOSFETTetrode SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
微型 (Min)
- 封装形式:
- 极限工作电压:
60V
- 最大电流允许值:
0.15A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
- 可代换的型号:
- 最大耗散功率:
- 放大倍数:
β>=2000
- 图片代号:
NO
- vtest:
60
- htest:
999900
- atest:
0.15
- wtest:
0
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST意法半导体 |
24+23+ |
TQFP |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
ST/意法 |
23+ |
NA/ |
3736 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ATMEL/爱特梅尔 |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
ATMEL/爱特梅尔 |
23+ |
BGA |
98900 |
原厂原装正品现货!! |
询价 | ||
ATMEL/爱特梅尔 |
24+ |
BGA |
96880 |
只做原装,欢迎来电资询 |
询价 | ||
ATMEL |
22+ |
DIP |
8200 |
原装现货库存.价格优势!! |
询价 | ||
ATMEL/爱特梅尔 |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ATMEL/爱特梅尔 |
2022 |
SOP8 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ATMEL |
21+ |
SOP8 |
9866 |
询价 | |||
AT |
23+ |
DIP |
4200 |
正品原装货价格低qq:2987726803 |
询价 |