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HCS374K/SAMPLE

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS374MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS374MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCT374

OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPS

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

HCT-374

HighCurrentToroidalInductors

API

API Delevan Inc.

HCTR-374

HighCurrentToroidalInductors

API

API Delevan Inc.

HCTS374D

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374D

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374DMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374DMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374DTR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-time

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

供应商型号品牌批号封装库存备注价格
ALTI-SEMI
24+
NA
990000
明嘉莱只做原装正品现货
询价
ALTI
2022+
3000
全新原装 货期两周
询价
ALTI
2023+环保现货
原厂封装
5050
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
Jonard
83
全新原装 货期两周
询价
FCI
1940
询价
ATMEL
22+
BGA
8200
全新原装现货!自家库存!
询价
ATMEL
22+
BGA
2650
原装优势!绝对公司现货
询价
ATMEL
20+
1008
全新现货热卖中欢迎查询
询价
ATMEL/爱特梅尔
22+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
ATMEL/爱特梅尔
23+
BGA
6500
只做原装正品现货!或订货假一赔十!
询价
更多AT374TWPEA供应商 更新时间2024-5-22 18:06:00