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AOU414	文件：69.31 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOU414	文件：352.84 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOU414L	文件：69.31 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AQV414	文件：168.96 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AQV414	文件：157.89 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AQV414	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQV414A	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQV414A	文件：168.96 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AQV414AX	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQV414AZ	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQV414E	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EA	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EAZ	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EH	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EHA	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EHAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EHAZ	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414S	文件：157.89 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AQW414	文件：169.72 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2

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产品属性

产品编号：
AQV414SZ
制造商：
Panasonic Electric Works
类别：
继电器 > 固态继电器
系列：
PhotoMOS™ AQV
包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
安装类型：
表面贴装型
电路：
DPST-NC（2 Form B）
输出类型：
AC，DC
电压 - 输入：
1.14VDC
端接样式：
鸥翼
封装/外壳：
6-SOP（0.173"，4.40mm）
供应商器件封装：
6-SOP
描述：
SSR RELAY DPST-NC 100MA 0-400V

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市凯斯宇科技有限公司	AQV414SZ	NAIS	2022	SOP/6	2058	原厂原装正品,价格超越代理	询价
深圳市锦达世纪科技有限公司	AQV414SZ	NAIS	06+	SOP6	2000		询价
深圳市一线半导体有限公司	AQV414SZ	NAIS	96+		272		询价
深圳市卓越微芯电子有限公司	AQV414SZ	NAIS	2020+	SOP/6	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市壹芯创科技有限公司	AQV414SZ	PANASONIC	22+	原厂原封	8200	原装现货库存.价格优势!!	询价
中天科工半导体（深圳）有限公司	AQV414SZ	panasoni	专业光耦	SOP6	65800	光耦原装优势主营型号-可开原型号增税票	询价
深圳市艾宇欣科技有限公司	AQV414SZ	Panasonic	2010+	N/A	1000	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	AQV414SZ	PANASONIC	20+	6-SOP	3796	就找我吧!--邀您体验愉快问购元件!	询价
深圳市恒意法电子有限公司	AQV414SZ	Panasonic	21+	SOIC-6	11000	正规渠道原装正品现货	询价
深圳市信佳源电子有限公司	AQV414SZ	NAIS	2011+	DIPSOP6	20000	原装现货	询价

更多AQV414SZ供应商更新时间2024-6-9 16:18:00

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