首页 >APT8024LLLG>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
T1/E1ExtendedTemperatureRangeSMDSingleTransformers | FILTRAN FILTRAN Group | FILTRAN | ||
ScoutUSBLTransceiver | SONARDYNESonardyne sound in depth Sonardyne sound in depth | SONARDYNE | ||
BusBarWire,#28SolTC ProductDescription BusBarWire,28AWG(Solid)TinnedCopper,QQ-W-343G | BELDEN Belden Inc. | BELDEN | ||
Quad350MHz24VAmplifier | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
Quad350MHz24VAmplifier PRODUCTDESCRIPTION TheAD8024isalowsettlingtime,high-speed,highoutputvoltagequadcurrentfeedbackoperationalamplifier.ManufacturedonADI’sproprietaryXFHVhigh-speedbipolarprocess,theAD8024iscapableofdrivingtowithin1.3Vofits24Vsupplyrail.Eachamplifierhashigh- | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
Quad350MHz24VAmplifier | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
Quad350MHz24VAmplifier | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
PowerSwitch(FPSTM)FSBH-seriestoStandbyAuxiliaryPowerSupply | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NON-ISOLATEDPFMCONVERTERS DESCRIPTION TheAP8024consistsofanintegratedPulseFrequencyModulator(PFM)controllerandpowerMOSFET,specificallydesignedforsmallpowernon-isolatedswitchingpowersupply.AP8024hasinternalhighvoltagestart-upcircuitandcompleteintelligentprotectionsincludingadjustableOver | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
NON-ISOLATEDPFMCONVERTERS DESCRIPTION TheAP8024consistsofanintegratedPulseFrequencyModulator(PFM)controllerandpowerMOSFET,specificallydesignedforsmallpowernon-isolatedswitchingpowersupply.AP8024hasinternalhighvoltagestart-upcircuitandcompleteintelligentprotectionsincludingadjustableOver | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwithexceptionall | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwithexceptionall | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=31A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOS7FREDFET | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW |
详细参数
- 型号:
APT8024LLLG
- 功能描述:
MOSFET N-CH 800V 31A TO-264
- RoHS:
是
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
POWER MOS 7®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
APTMICROSEMI |
17+ |
TO-264L |
31518 |
原装正品 可含税交易 |
询价 | ||
23+ |
N/A |
36100 |
正品授权货源可靠 |
询价 | |||
APT |
23+ |
TO-264L |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
APT |
23+ |
TO-264L |
10000 |
公司只做原装正品 |
询价 | ||
Microsemi Corporation |
21+ |
TO2643 TO264AA |
13880 |
公司只售原装,支持实单 |
询价 | ||
Microsemi Corporation |
23+ |
TO2643 TO264AA |
9000 |
原装正品,支持实单 |
询价 | ||
Microsemi Corporation |
2022+ |
TO-264-3,TO-264AA |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
APT |
24+25+/26+27+ |
TO-264L |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
APT |
08+(pbfree) |
8866 |
询价 | ||||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
询价 |
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