APM2317AC-TRG

P-Channel 20-V (D-S) MOSFET

2317

BandpassFilter

2317DFO

LowVoltageandPowerApplications

2317-RC

HighCurrentToroidInductors

2317-RC

HighCurrentToroidInductorsHorizontalorverticalmount

2317-RC

HighCurrentToroidInductors

2317-RC

HighCurrentToroidInductors

2317-RC

HighCurrentToroidInductors

AA-2317

InsulKrimp??FullyInsulatedPiggybackQuickDisconnect,Tab6.35mm(.250)by0.81mm(.032),18-22AWG,RedInsulator,Loose

AA-2317T

InsulKrimp??FullyInsulated

AA-2317X

InsulKrimp??FullyInsulatedPiggybackQuickDisconnect,Tab6.35mm(.250)by0.81mm(.032),18-22AWG,ExpandedBlueInsulatorTape

AA-2317XT

InsulKrimp??FullyInsulatedPiggybackQuickDisconnect

AM2317

MOSFETP-CHANNELENHANCEMENTMODE

DESCRIPTION TheAM2317isavailableinSOT-23package. FEATURES -20V/-4.6A, RDS(ON)=48mΩ(Max.)@VGS=-4.5V RDS(ON)=70mΩ(Max.)@VGS=-2.5V RDS(ON)=110mΩ(Max.)@VGS=-1.8V ReliableandRugged AvailableinSOT-23Package APPLICATIONS PowerManagementinNotebookComputer,P

AM2317A

MOSFETP-CHANNELENHANCEMENTMODEPOWERMOSFET

DESCRIPTION AM2317AistheP-ChannelenhancementmodepowerfieldeffecttransistorsareusingtrenchDMOStechnology.Thisadvancedtrenchtechnologydevicesarewellsuitedforhighefficiencyfastswitchingapplications,lowin-linepowerlossareneededinsmalloutlinesurfacemountpackage.

AM2317B

MOSFET-20VSINGLEP-CHANNELMOSFET

DESCRIPTION V DS20V V GS=±8V ID(A)= 5.3A R DS(ON)ON)=31mΩ(Typ.)@VGS4.5V R DS(ON)ON)=40mΩ(Typ.)@VGS2.5V R DS(ON)50mΩ(Typ.)@VGS1.8V R DS(ON)60mΩ(Typ.)@VGS1.5V TheAM2317BisavailableinSOT-23package. FEATURES TrechDMOSTechnology 1.5VLowgatedri

AM2317P

P-ChannelLogicLevelMOSFET

TheseminiaturesurfacemountMOSFETsutilizeahighcelldensitytrenchprocesstoprovidelowrDS(on)andtoensureminimalpowerlossandheatdissipation.TypicalapplicationsareDC-DCconvertersandpowermanagementinportableandbattery-poweredproductssuchascomputers,printers,PCMCIA

AN2317

EnergyMeteringICExternalCircuits

AP2317

600mALOWDROPOUTLINEARREGULATOR

AP2317

600mALOWDROPOUTLINEARREGULATOR

AP2317GN-HF

SimpleDriveRequirement,SmallPackageOutline