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FDD6680AS

30VN-ChannelPowerTrench짰SyncFET?

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6680AS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6680AS

30VN-ChannelMOSFET

Features •IncludesSyncFETSchottkybodydiode •Lowgatecharge(21nCtypical) •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability •VDS(V)=30V •ID=50A(VGS=10V) •RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

FDD6680AS_NL

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6680ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6680ASincludesanintegratedSchottkydiode

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6680-NL

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

FDD6680S

30VN-ChannelPowerTrenchSyncFET?

GeneralDescription TheFDD6680SisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6680SincludesanintegratedSchottkydiodeusin

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6680S

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDS6680

30VN-ChannelMOSFET

Features •Ultra-lowgatecharge •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=12A RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

FDS6680

SingleN-ChannelLogicLevelPWMOptimizedPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features ■11.5A,30V.RDS(ON)=0.010W@VGS=10V RDS(ON

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS6680A

SingleN-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •12.5A,30VRDS(ON)=9.5mΩ@VGS=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS6680A

30VN-ChannelMOSFET

Features •Ultra-lowgatecharge •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=12A RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

FDS6680A

SingleN-Channel,LogicLevel,PowerTrench짰MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS6680AS

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDS6680ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6680ASincludesanintegratedSchottkydio

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS6680AS

30VN-ChannelPowerTrenchSyncFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS6680AS_NL

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDS6680ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6680ASincludesanintegratedSchottkydio

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS6680S

30VN-ChannelPowerTrenchSyncFET?

GeneralDescription TheFDS6680SisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6680SincludesanintegratedSchottkydiode

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDU6680

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •46A,30VRDS(ON)=10mΩ@V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDU6680

30VN-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDU6680A

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

GSC6680

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

详细参数

  • 型号:

    AP6680CGYT-HF

  • 制造商:

    A-POWER

  • 制造商全称:

    Advanced Power Electronics Corp.

  • 功能描述:

    Simple Drive Requirement, Small Size & Lower Profile

供应商型号品牌批号封装库存备注价格
APEC/富鼎
DFN33-8-EP
265209
假一罚十原包原标签常备现货!
询价
APEC/富鼎
23+
DFN33-8-EP
50000
全新原装正品现货,支持订货
询价
APEC/富鼎
2022+
DFN33-8-EP
5000
原厂代理 终端免费提供样品
询价
APEC/富鼎
2021+
DFN3*3
9999999
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
APEC/富鼎
23+
DFN33-8-EP
20000
原装正品 欢迎咨询
询价
APEC/富鼎
23+
NA/
53250
原装现货,当天可交货,原型号开票
询价
APEC/富鼎
2022+
DFN33
30000
进口原装现货供应,原装 假一罚十
询价
APEC-富鼎
24+25+/26+27+
DFN-贴片
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
APEC/富鼎
20+
DFN33-8-EP
300000
现货很近!原厂很远!只做原装
询价
APEC
13+
NA
37258
原装分销
询价
更多AP6680CGYT-HF供应商 更新时间2024-6-19 16:18:00