| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
P-Ch30VFastSwitchingMOSFETs Description TheFKL3103isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellent RDSONandefficiencyformostofthesmall powerswitchingandloadswitchapplications. TheFKL3103meettheRoHSandGreen Productrequirementwithfullfunctionreliability approved. | FETEKFETek Technology Corp. 台灣東沅公司 東沅科技股份有限公司 | FETEK | ||
P-Ch30VFastSwitchingMOSFETs Description TheFKN3103isthehighcelldensitytrenched P-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronousbuck converterapplications. TheFKN3103meettheRoHSandGreenProduct requirement,100EASguaranteedwithfull functionreliabilityapproved. | FETEKFETek Technology Corp. 台灣東沅公司 東沅科技股份有限公司 | FETEK | ||
P-Ch30VFastSwitchingMOSFETs Description TheFKS3103isthehighcelldensitytrenched P-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronousbuck converterapplications. TheFKS3103meettheRoHSandGreenProduct requirement,100EASguaranteedwithfull functionreliabilityapproved. | FETEKFETek Technology Corp. 台灣東沅公司 東沅科技股份有限公司 | FETEK | ||
4A180KHz36VBuckDCtoDCConverter | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
CurrentTransducer | LEMLEM Electronics (China) Co., Ltd. 莱姆电子（中国）有限公司 | LEM | ||
CurrentTransducer | LEMLEM Electronics (China) Co., Ltd. 莱姆电子（中国）有限公司 | LEM | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HighPerformanceRelativeHumidityandTemperatureSensor Features •Humidityrange:0to100RH •Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) •Hydrophobicmembrane,IP67rating •14-bitresolution:0.01RH,typical •Independentprogrammableresolutionsettings:8, 10,12,14bits •FastRHresponsetime:1secondtimeconstant, | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensor Features Humidityrange:0to100RH Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) Hydrophobicmembrane,IP67rating 14-bitresolution:0.01RH,typical Independentprogrammableresolutionsettings:8, 10,12,14bits FastRHresponsetime:1secondtimeconstant, typical(w | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensorwithDigitalOutput Features ■Humidityrange:0to100RH ■Automotivegrade,AEC-Q100qualified,Grade2, -40°Cto+105°C ■Industrialgrade,JEDECqualified,-40°Cto +125°C ■DigitalI2CoutputwithCRCchecksum ■RHaccuracy:±1.5RH,typical(HS4001) ■14-bitresolution:0.04RH,typical ■Independentpro | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensorModule Applications ■Climatecontrolsystems ■Homeappliances ■Weatherstations ■Industrialautomation ■Medicalequipment Features ■Humidityrange:0to100RH ■HumiSealcoatingformoistureprotection ■Humidityaccuracy:±1.5RH,typical ■14-bitresolution:0.01RH,typical ■Indep | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Half-BridgeFredFETandIntegratedDriver Description TheIR3103isagatedriverICintegratedwithahalfbridgeFredFETdesignedformotordriveapplicationsupto180W(heatsink-less).Thesleekandcompactsingle-in-linepackageisoptimizedforelectronicmotorcontrolinapplianceapplicationssuchasfansandcompressorsforrefr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET | InterFET InterFET Corporation | InterFET | ||
PowerMOSFET(Vdds=30V,Rds(on)=12mohm,Id=64A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS |
2017+ |
QFN |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
AOS |
2016+ |
QFN |
5000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
AOS |
22+23+ |
QFN |
31572 |
绝对原装正品全新进口深圳现货 |
询价 | ||
AOS |
23+ |
QFN |
4844 |
原装现货假一赔十 |
询价 | ||
AOSMD |
18+ |
DFN8 |
30985 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
23+ |
N/A |
49200 |
正品授权货源可靠 |
询价 | |||
AOS |
1924+ |
QFN |
47500 |
AOS专营!正规代理,错过是损失! |
询价 | ||
原装AOS |
19+ |
DFN |
20000 |
询价 | |||
AOS/万代 |
1942+ |
DFN |
9852 |
只做原装正品现货或订货!假一赔十! |
询价 | ||
Alpha&OmegaSemiconductor |
23+ |
8-DFN(3x3) |
66800 |
全新更新库存原厂原装现货 |
询价 |
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