| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
AOTF7N65 | 650V, 7A N-Channel MOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | |
AOTF7N65 | N-Channel 650 V (D-S) Power MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
AOTF7N65 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
7Amps,650Volts7Amps,650Volts DESCRIPTION TheUTC7N65isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
7.4Amps,650VoltsN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
7Amps,650VoltsN-CHANNELMOSFET FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | CHONGQING | ||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
650VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | DYELEC | ||
N-CHANNELPOWERMOSFET ■DESCRIPTION 7N607N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswitch | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
DrainCurrentID=7A@TC=25C •FEATURES •DrainCurrentID=7A@TC=25℃ •DrainSourceVoltage :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V •AvalancheEnergySpecified •FastSwitching •APPLICATIONS •Highspeedswitchingapplicationsinpowersupplies •PWM | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
7.4A,650VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description 650VN-CHANNELENHANCEMENTMODEPOWERMOSFET Features RDS(ON)=1.27Ω(Max.)@VGS=10V,ID=3.5A Fastswitching 100avalanchetested Improveddv/dtcapability Application DC-DC&DC-ACConverters UninterruptiblePowerSupply(UPS) SwitchModeLowPowerSu | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG | ||
N-channelpowerMOStube Features *VDS(V)=650V *RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
7A650VN-channelenhancementmodefieldeffecttransistor 7A650VN-channelenhancementmodefieldeffecttransistor Performancecharacteristics: ♦Fastswitchingspeed ♦Lowon-resistance ♦Lowreversetransfercapacitance ♦Lowgatecharge ♦100singlepulseavalancheenergytest ♦Improveddv/dtcapability | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
7A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
7Amps,650VoltsN-CHANNELMOSFET FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | CHONGQING | ||
650VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE |
详细参数
- 型号：
AOTF7N65
- 功能描述：
MOSFET N-CH 650V 7A TO220F
- RoHS：
是
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
-
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS |
17+ |
TO220F |
62000 |
原装现货本公司只卖原装货 |
询价 | ||
Alpha & Omega Semiconductor In |
23+ |
TO-220F |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
AOS/万代 |
2019+ |
TO220 |
6700 |
原厂渠道 可含税出货 |
询价 | ||
AOS/万代 |
2024+实力库存 |
TO-220 |
5000 |
只做原厂渠道 可追溯货源 |
询价 | ||
AOS/原装超低价 |
23+ |
TO-220 |
700000 |
公主请下单 柒号只做原装 |
询价 | ||
AOS |
12+ |
TO220F |
2400 |
特价热销现货库存100%原装正品欢迎来电订购! |
询价 | ||
ALPHA&OMEGA |
2016+ |
TO-220F |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
AOS |
2016+ |
TO220F |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 | ||
AOS |
11+ |
TO220F |
100 |
进口原装现货假一赔十 |
询价 | ||
AOS |
2017+ |
TO220F |
21546 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 |
相关规格书
更多- AOTF7N65L
- AOTF8N60
- AOTF8N65_004
- AOTF9606
- AOTF9610
- AOTF9N70
- AOU1N60
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- AOU400
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- AOW110-S
- AOW110-W/AWR1
- AOW111-B,R,G
- AOW12N50
- AOW12N65
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- AOW201-R
- AOW201-Y
- AOW220-G
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相关库存
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- AOU400L
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- AOU405L
- AOU408L
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- AOU417L
- AOU438
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- AOU452
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- AOU4N60
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- AOW-100
- AOW100-W/AWR1
- AOW101-Y
- AOW10N65
- AOW110-BGR
- AOW110N-B
- AOW110-W
- AOW110-Y
- AOW111-G
- AOW12N60
- AOW14N50
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- AOW201-G
- AOW201-S
- AOW220-B
- AOW220-R
- AOW220-Y
- AOW222-Y
