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AOTF11S65

650V 11A a MOS Power Transistor

GeneralDescription TheAOT11S65&AOB11S65&AOTF11S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF11S65

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOB11S65

650V11AaMOSPowerTransistor

GeneralDescription TheAOT11S65&AOB11S65&AOTF11S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB11S65

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=11A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.399Ω(Max) •100avalanchetested •MinimumLot-to-L

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOB11S65

N-Channel650V(D-S)MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOB11S65L

N-Channel650V(D-S)MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOT11S65

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT11S65

650V11AaMOSPowerTransistor

GeneralDescription TheAOT11S65&AOB11S65&AOTF11S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT11S65

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOW11S65

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=11A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.399Ω(Max) •100avalanchetested •MinimumLot-to-L

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOW11S65

650V11AaMOSTMPowerTransistor

GeneralDescription TheAOW11S65&AOWF11S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOWF11S65

650V11AaMOSTMPowerTransistor

GeneralDescription TheAOW11S65&AOWF11S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

T11S65

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

供应商型号品牌批号封装库存备注价格
AOS/万代
2019+
TO220
3333
原厂渠道 可含税出货
询价
AOS
23+
TO-220F
700000
公主请下单 柒号只做原装
询价
AOS/万代
24+
TO-220F
333888
专业直销原装AOS一系列可订货
询价
AOS
2016+
TO-220F
6528
房间原装进口现货假一赔十
询价
AOS
TO-220F
20000
原装正品
询价
AOS
21+
TO-220F
12588
原装正品
询价
23+
N/A
45780
正品授权货源可靠
询价
VB
2019
TO-220F
55000
绝对原装正品假一罚十!
询价
AOS万代
23+
TO-TO-220F
12300
全新原装真实库存含13点增值税票!
询价
AOS万代
20+
TO-220F
36900
原装优势主营型号-可开原型号增税票
询价
更多AOTF11S65供应商 更新时间2024-5-16 16:04:00