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AOB11S60

isc N-Channel MOSFET Transistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=11A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.399Ω(Max) •100avalanchetested •MinimumLot-to

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOB11S60

N-Channel 650 V (D-S) MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOB11S60

600V 11A a MOS Power Transistor

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB11S60L

N-Channel 650 V (D-S) MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOB11S60L

600V 11A a MOS

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB11S60L

600V 11A a MOS

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOD11S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD11S60

600V11AaMOSPowerTransistor

GeneralDescription TheAOD11S60&AOI11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOI11S60

600V11AaMOSPowerTransistor

GeneralDescription TheAOD11S60&AOI11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOI11S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT11S60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOT11S60

600V11AaMOSPowerTransistor

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT11S60L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT11S60L

600V11AaMOS

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT11S60L

600V11AaMOS

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF11S60

600V11AaMOS

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF11S60

600V11AaMOSPowerTransistor

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF11S60

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

AOTF11S60

600V11AaMOS

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF11S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    AOB11S60

  • 制造商:

    AOSMD

  • 制造商全称:

    Alpha & Omega Semiconductors

  • 功能描述:

    600V 11A a MOS Power Transistor

供应商型号品牌批号封装库存备注价格
AOS/万代
2019+
TO263
3333
原厂渠道 可含税出货
询价
AOS万代
23+
TO-263
12300
全新原装真实库存含13点增值税票!
询价
AOS/万代
23+
TO-263
700000
公主请下单 柒号只做原装
询价
AOS/万代
24+
TO-263
333888
专业直销原装AOS一系列可订货
询价
AOS
TO-263
20000
原装正品
询价
VB
2019
TO-263
55000
绝对原装正品假一罚十!
询价
AOS万代
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
询价
AOS
21+
TO263
36500
一级代理/全新原装现货/长期供应!
询价
AOS/万代
23+
TO-263
24190
原装正品代理渠道价格优势
询价
AOS/万代
21+
TO-263
30000
优势供应 实单必成 可13点增值税
询价
更多AOB11S60供应商 更新时间2024-5-26 16:04:00