STM8301

DualEnhancementModeFieldEffectTransistor(NandPChannel)

DualEnhancementModeFieldEffectTransistor(NandPChannel)

T8301

T8301InternetProtocolTelephonePhone-On-A-Chip??IPSolutionDSP

Introduction LucentTechnologies’Phone-On-A-ChipIPSolutionisahighlyintegratedsetofICchipsthatformthebasicbuildingblocksforaninternetprotocoltelephone(IPT),residingonalocalareanetwork(LAN). TheIPTpresentlyconsistsoftwoICs—theT8301(IPT_DSP)andtheT8302(IPT_

T8301AX

TerminatorDie

T8301BX

TerminatorDie

T8301DX

TerminatorDie

TP8301

HighpowerfactorprimarysidefeedbackLEDconstantcurrentdriverchip

TPC8301

SiliconPChannelMOSType(L2-MOSVI)

TPCF8301

FIELDEFFECTTRANSISTORSILICONPCHANNELMOSTYPE(U竊뛏OS??

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=72mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=4.7S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−20V) •Enhancementmodel:Vth=−0.5to−1.2V

TPCF8301

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

TPCF8301

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCP8301

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOS??

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Lead(Pb)-free •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=25mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=14S(typ.) •Lowleakagecurrent:

VKL-8301

MultipleBeamKlystorn