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AM29LV160BT70RSCB中文资料PDF规格书

AM29LV160BT70RSCB
厂商型号

AM29LV160BT70RSCB

功能描述

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

文件大小

695.74 Kbytes

页面数量

48

生产厂商 Advanced Micro Devices, Inc.
企业简称

AMD超威半导体

中文名称

美国超威半导体公司官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-5-14 17:51:00

AM29LV160BT70RSCB规格书详情

GENERAL DESCRIPTION

The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors

■ Manufactured on 0.32 µm process technology

■ High performance

— Full voltage range: access times as fast as 80 ns

— Regulated voltage range: access times as fast as 70 ns

■ Ultra low power consumption (typical values at 5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 9 mA read current

— 20 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing multiple program command sequences

■ Top or bottom boot block configurations available

■ Embedded Algorithms

— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

— Embedded Program algorithm automatically writes and verifies data at specified addresses

■ Minimum 1,000,000 write cycle guarantee per sector

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

■ CFI (Common Flash Interface) compliant

— Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices

■ Compatibility with JEDEC standards

— Pinout and software compatible with singlepower supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase cycle completion (not available on 44-pin SO)

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data

供应商 型号 品牌 批号 封装 库存 备注 价格
23+
N/A
90050
正品授权货源可靠
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