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EN29LV160B-90B	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.
EN29LV160B-90BI	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.
EN29LV160B-90BIP	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.
EN29LV160B-90BP	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.
EN29LV160B-90T	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.
EN29LV160B-90TI	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.
EN29LV160B-90TIP	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.
EN29LV160B-90TP	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.
MBM29LV160B-90	文件：767.76 Kbytes Page：60 Pages	16M(2Mx쨈8/1Mx16)BIT GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社
MBM29LV160B-90	文件：731.38 Kbytes Page：58 Pages	FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT ■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan	spansionSPANSION 飞索飞索半导体
MBM29LV160B-90PBT	文件：731.38 Kbytes Page：58 Pages	FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT ■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan	spansionSPANSION 飞索飞索半导体
MBM29LV160B-90PBT	文件：767.76 Kbytes Page：60 Pages	16M(2Mx쨈8/1Mx16)BIT GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社
MBM29LV160B-90PCV	文件：731.38 Kbytes Page：58 Pages	FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT ■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan	spansionSPANSION 飞索飞索半导体
MBM29LV160B-90PCV	文件：767.76 Kbytes Page：60 Pages	16M(2Mx쨈8/1Mx16)BIT GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社
MBM29LV160B-90PFTN	文件：731.38 Kbytes Page：58 Pages	FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT ■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan	spansionSPANSION 飞索飞索半导体
MBM29LV160B-90PFTN	文件：767.76 Kbytes Page：60 Pages	16M(2Mx쨈8/1Mx16)BIT GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社
MBM29LV160B-90PFTR	文件：731.38 Kbytes Page：58 Pages	FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT ■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan	spansionSPANSION 飞索飞索半导体
MBM29LV160B-90PFTY	文件：767.76 Kbytes Page：60 Pages	16M(2Mx쨈8/1Mx16)BIT GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社
MBM29LV160B-90PN	文件：767.76 Kbytes Page：60 Pages	16M(2Mx쨈8/1Mx16)BIT GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	AM29LV160B-90EC	AMD	23+	TSSOP/48	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市凯斯宇科技有限公司	AM29LV160B-90EC	AMD	2022	TSSOP/48	2058	原厂原装正品,价格超越代理	询价
深圳市壹芯创科技有限公司	AM29LV160B-90EC	AMD	22+	TSSOP	8200	原装现货库存.价格优势!!	询价
深圳市百视威讯电子科技有限公司	AM29LV160B-90EC		23+	N/A	90350	正品授权货源可靠	询价
深圳市纳艾斯科技有限公司	AM29LV160B-90EC	AMD	2020+	TSOP48	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市维尔达电子有限公司	AM29LV160B-90EC	AMD	2023+	TSSOP/48	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
艾睿国际（香港）有限公司	AM29LV160B-90EC	AMD	2021+	TSOP1	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市航润创能电子集团有限公司	AM29LV160B-90EC	AMD	21+	TSOP48	16	原装现货假一赔十	询价
深圳市汇莱威科技有限公司	AM29LV160B-90EC	AMD		TSOP48	265209	假一罚十原包原标签常备现货!	询价
深圳市振芯物联科技有限公司	AM29LV160B-90EC	AMD	22+	TSOP48	32350	原装正品假一罚十公司现货	询价

更多AM29LV160B-90EC供应商更新时间2024-4-28 17:52:00

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