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F2017ERW

F2000ERWSERIES

MPD

MPD (Memory Protection Devices)

F2017ERW

LowCost,Compact20W,2:1InputRangeDC/DCConverters

KeyFeatures: •20WOutputPower •2:1InputVoltageRange •1,500VDCIsolation •Single&DualOutputs •Efficiencyto86 •Compact1.6x2In.Case •-40°Cto+71°COperation •IndustryStandardPin-Out •LowestCost!!

MPD

MPD (Memory Protection Devices)

FMS2017

2.4GHzDPDTGaAsSingle-BandWLANSwitch

FILTRONICFiltronic Compound Semiconductors

Filtronic Compound Semiconductors

FMS2017QFN

2.4GHzDPDTGaAsSingle-BandWLANSwitch

FILTRONICFiltronic Compound Semiconductors

Filtronic Compound Semiconductors

FTD2017

LoadSwitchingApplications

LoadSwitchingApplications Features •LowONresistance. •2.5Vdrive. •Mountingheight1.1mm. •Compositetype,facilitatinghigh-densitymounting.

SANYOSanyo

三洋三洋电机株式会社

FTD2017

DualN-Channel25-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

FTD2017A

DualN-Channel25-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

FTD2017C

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •LowON-resistance •2.5Vdrive •Mountheigt1.1mm •Compositetype,facilitatinghigh-densitymounting •Draincommonspecifications •Halogenfreecompliance

SANYOSanyo

三洋三洋电机株式会社

FTD2017M

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •2.5Vdrive. •Mountheight1.1mm. •Compositetype,facilitatinghigh-densitymounting. •Draincommonspecifications.

SANYOSanyo

三洋三洋电机株式会社

FTD2017R

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice

General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •2.5Vdrive. •Mountheight1.1mm. •Compositetype,facilitatinghigh-densitymounting. •Draincommonspecifications.

SANYOSanyo

三洋三洋电机株式会社

G2017

RubberPush-InBumpers

Heyco

Heyco

GT-BGA-2017

Easilyremovableswivelsocketlid

IRONWOODIronwood Electronics.

Lronwood电子公司

H2017

10/100BASE-TXVoIPMagneticsModules

pulse

Pulse Electronics

H2017NL

PowerOVEREthernet(PoE)Magneticsand(PoE)Magnetics

pulse

Pulse Electronics

H2017NL

RoHSpeakreflowtemperaturerating245C

pulse

Pulse Electronics

H2017NL

10/100BASE-TXVoIPMagneticsModules

pulse

Pulse Electronics

H2017NL

MDL,QUAD,100P,1:1,SM,TU

pulse

Pulse Electronics

HAF2017

SiliconNChannelPowerMOSFETPowerSwitching

Descriptions ThisFEThastheovertemperatureshutdowncapabilitysensingthejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshutdowncircuitinthegatearea.Andthiscircuitoperationtoshutdownthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpower

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HAF2017(L)_15

SiliconNChannelPowerMOSFETPowerSwitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTL-2017

QuadratureDecoder/CounterInterfaceICs

Description TheHCTL-2021/2017isCMOSICsthatperformsthequadraturedecoder,counter,andbusinterfacefunction.TheHCTL-2021/2017isdesignedtoimprovesystemperformanceindigitalclosedloopmotioncontrolsystemsanddigitaldatainputsystems.Itdoesthisbyshiftingtimeintensiv

AVAGOAvago

安华高安华高科技

详细参数

  • 型号:

    ALN2017

  • 制造商:

    ASB

  • 制造商全称:

    ASB

  • 功能描述:

    Internally Matched LNA Module

供应商型号品牌批号封装库存备注价格
ASB
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
BHC
22+
40X55
90000
原装进口现货/百分百正品
询价
IDEC
2021++
只做原装
985
进口原装假一赔百,现货热卖
询价
2023+
高频电阻
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多ALN2017供应商 更新时间2024-5-25 8:02:00