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ALD212900SAL规格书详情
GENERAL DESCRIPTION
The ALD212900A/ALD212900 precision N-Channel EPAD® MOSFET array is
precision matched at the factory using ALD’s proven EPAD® CMOS technology.
These dual monolithic devices are enhanced additions to the ALD110900A/
ALD110900 EPAD® MOSFET Family, with increased forward transconductance
and output conductance, particularly at very low supply voltages.
Intended for low voltage, low power small signal applications, the ALD212900A/
ALD212900 features Zero-Threshold™ voltage, which enables circuit designs
with input/output signals referenced to GND at enhanced operating voltage
ranges. With these devices, a circuit with multiple cascading stages can be
built to operate at extremely low supply/bias voltage levels. For example, a
nanopower input amplifier stage operating at less than 0.2V supply voltage has
been successfully built with these devices.
ALD212900A EPAD MOSFETs feature exceptional matched pair device electrical
characteristics of Gate Threshold Voltage VGS(th) set precisely at 0.00V
+0.01V, IDS = +20μA @ VDS = 0.1V, with a typical offset voltage of only +0.001V
(1mV). Built on a single monolithic chip, they also exhibit excellent temperature
tracking characteristics. These precision devices are versatile as design components
for a broad range of analog small signal applications such as basic
building blocks for current mirrors, matching circuits, current sources, differential
amplifier input stages, transmission gates, and multiplexers. They also excel
in limited operating voltage applications, such as very low level voltageclamps
and nano-power normally-on circuits.
In addition to precision matched-pair electrical characteristics, each individual
EPAD MOSFET also exhibits well controlled manufacturing characteristics, enabling
the user to depend on tight design limits from different production batches.
These devices are built for minimum offset voltage and differential thermal response,
and they can be used for switching and amplifying applications in +0.1V
to +10V (+0.05V to +5V) powered systems where low input bias current, low
input capacitance, and fast switching speed are desired. At VGS > 0.00V, the
device exhibits enhancement mode characteristics whereas at VGS < 0.00V the
device operates in the subthreshold voltage region and exhibits conventional
depletion mode characteristics, with well controlled turn-off and sub-threshold
levels that operate the same as standard enhancement mode MOSFETs.
The ALD212900A/ALD212900 features high input impedance (2.5 x 1010Ω) and
high DC current gain (>108). A sample calculation of the DC current gain at a
drain output current of 30mA and input current of 300pA at 25°C is 30mA/300pA
= 100,000,000, which translates into a dynamic operating current range of about
eight orders of magnitude. A series of four graphs titled “Forward Transfer Characteristics”,
with the 2nd and 3rd sub-titled “expanded (subthreshold)” and “further
expanded (subthreshold)”, and the 4th sub-titled “low voltage”, illustrates
the wide dynamic operating range of these devices.
Generally it is recommended that the V+ pin be connected to the most positive
voltage and the V- and IC (internally-connected) pins to the most negative voltage
in the system. All other pins must have voltages within these voltage limits
at all times. Standard ESD protection facilities and handling procedures for static
sensitive devices are highly recommended when using these devices.
FEATURES & BENEFITS
• Zero Threshold™ VGS(th) = 0.00V +0.01V
• VOS (VGS(th) match) to 2mV/10mV max.
• Sub-threshold voltage ( nano-power) operation
• < 100mV min. operating voltage
• < 1nA min. operating current
• < 1nW min. operating power
• > 100,000,000:1 operating current ranges
• High transconductance and output conductance
• Low RDS(ON) of 14Ω
• Output current >50mA
• Matched and tracked tempco
• Tight lot-to-lot parametric control
• Positive, zero, and negative VGS(th) tempco
• Low input capacitance and leakage currents
APPLICATIONS
• Low overhead current mirrors and current sources
• Zero Power Normally-On circuits
• Energy harvesting circuits
• Very low voltage analog and digital circuits
• Zero power fail-safe circuits
• Backup battery circuits & power failure detector
• Extremely low level voltage-clamps
• Extremely low level zero-crossing detector
• Matched source followers and buffers
• Precision current mirrors and current sources
• Matched capacitive probes and sensor interfaces
• Charge detectors and charge integrators
• High gain differential amplifier input stage
• Matched peak-detectors and level-shifters
• Multiple Channel Sample-and-Hold switches
• Precision Current multipliers
• Discrete matched analog switches/multiplexers
• Nanopower discrete voltage comparators
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Advanced Linear Devices Inc. |
21+ |
8SOIC |
13880 |
公司只售原装,支持实单 |
询价 | ||
Advanced Linear Devices Inc. |
23+ |
8SOIC |
9000 |
原装正品,支持实单 |
询价 | ||
AdvancedLinearDevicesInc |
2019+ |
8-PDIP |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
Advanced Linear Devices Inc. |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
询价 | ||
Advanced Linear Devices Inc. |
2022+ |
8-SOIC |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ADVANCED |
24+25+/26+27+ |
8-SOIC |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
Advanced Linear Devices Inc. |
24+ |
8-SOIC(0.154,3.90mm 宽) |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
ADVANCED |
1809+ |
SOP-8 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 |