| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPNEPITAXIALSILICONPOWERTRANSISTOR NPNEPITAXIALSILICONPOWERTRANSISTOR TO-126 PlasticPackage | CDIL CDIL | CDIL | ||
LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange. | SIEMENS Siemens Ltd | SIEMENS | ||
LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange. | SIEMENS Siemens Ltd | SIEMENS | ||
N-channelsiliconfield-effecttransistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelsiliconfield-effecttransistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange. | SIEMENS Siemens Ltd | SIEMENS | ||
N-channelsiliconfield-effecttransistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange. | SIEMENS Siemens Ltd | SIEMENS | ||
N-channelsiliconfield-effecttransistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange. | SIEMENS Siemens Ltd | SIEMENS | ||
NPN22GHzwidebandtransistor DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Veryhighpowergain •Lownoisefigure •Hightransitionfrequency •Emitteristhermallead •Lowfeedbackcapacitance. APPLI | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN22GHzwidebandtransistor DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Veryhighpowergain •Lownoisefigure •Hightransitionfrequency •Emitteristhermallead •Lowfeedbackcapacitance. APPLI | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor •Lowcurrentdevicesuitablee.g.forhandhelds •Forhighfrequencyoscillatorse.g.DROforLNB •ForISMbandapplicationslike AutomaticMeterReading,Sensorsetc. •TransitfrequencyfT=25GHz •Pb-free(RoHScompliant)andhalogen-freepa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
BandpassFilter | MINIMini-Circuits 微型电路 | MINI | ||
ULTRA-FASTRECOVERY30to35AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING | edi edi | edi | ||
modulesfromLairdaredesignedtomeettheneedsofdeveloperswhowishtoaddrobust | LSTD Laird Tech Smart Technology | LSTD | ||
High-sideswitch PROFET® *High-sideswitch *Short-circuitprotection *Overtemperatureprotection *Overloadprotection *Loaddumpprotection?) *Undervoltageandovervollaflesshutdownwithauto-restartandhysteresis *Reversebatteryprotection *Inputandstatusprotection *Clampofnegativeoutput | SIEMENS Siemens Ltd | SIEMENS | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighVoltage ·HighSpeedSwitching APPLICATIONS ·Designedforuseinhigh-frequencypowersuppliesandmotorcontrolapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Panasonic |
2010+ |
N/A |
66 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
Panasonic |
新 |
5 |
全新原装 货期两周 |
询价 | |||
Panasonic |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
松下 |
23+ |
7300 |
专注配单,只做原装进口现货 |
询价 | |||
松下 |
23+ |
7300 |
专注配单,只做原装进口现货 |
询价 | |||
高见泽 |
22+ |
原廠原封 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
SHININGFAIR |
23+ |
DIP |
8160 |
原厂原装 |
询价 | ||
ShingFair |
1930 |
15 |
公司优势库存 热卖中!! |
询价 | |||
TI |
23+ |
MSOP8 |
8000 |
全新原装现货,欢迎来电咨询 |
询价 | ||
INTERSIL |
22+ |
MSOP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 |
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